Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

中文翻译：

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用于电子和光电子学的 (001) 硅上高度失配的 III-V 族材料的外延生长

几十年来，III-V 族在硅上的单片集成一直是一个具有科学吸引力的概念。由于电子行业对高迁移率沟道晶体管的浓厚兴趣和硅光子技术的蓬勃发展，该研究领域最近取得了显着进展。在这篇评论文章中，我们概述了在 (001) 取向的硅衬底上外延生长高度失配的 III-V 族材料（包括砷化物、磷化物和锑化物）的基本障碍。讨论了从微米到纳米长度尺度的异质外延和选择性区域异质外延的进展。还介绍了新兴电子学和集成光子学的机会。