Abstract Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV laser sources compatible with the microelectronics industry, seen as an alternative to the complexity of integration of III-V lasers on Si. The difficulties come from the fact that the group-IV semiconductor bandgap has to be transformed from indirect to direct, using high tensile strains or by alloying germanium with tin. Here, we review recent progresses on critical germanium-based photonic components such as waveguides, photodiodes and modulators and discuss the latest advances towards germanium-based lasers. We show that novel optical germanium-On-Insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si - Complementary Metal Oxide Semiconductor (CMOS) - compatible laser demonstration. This review hints at a future photonics platform based on germanium and Silicon.

中文翻译：

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面向全硅/锗光子平台的锗基光子组件

摘要 最近，锗基材料引起了很多人的兴趣，因为它们可以克服标准硅光子器件固有的一些限制，并且可以特别用于中红外传感应用。外延生长的本征和掺杂材料的质量对于达到目标性能至关重要。该领域的主要挑战之一仍然是制造与微电子行业兼容的高效 IV 族激光源，这被视为在 Si 上集成 III-V 族激光器复杂性的替代方案。困难来自这样一个事实，即必须使用高拉伸应变或通过将锗与锡合金化，将 IV 族半导体带隙从间接转变为直接。在这里，我们回顾了关键的锗基光子组件（如波导）的最新进展，光电二极管和调制器，并讨论锗基激光器的最新进展。我们展示了由 Smart Cut™ 技术制造的新型光学绝缘体上锗 (GeOI) 衬底是未来 Si - 互补金属氧化物半导体 (CMOS) - 兼容激光演示的关键特征。这篇评论暗示了基于锗和硅的未来光子学平台。