A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables is imperative; however, this can be difficult to achieve due to the large number of independent experimental parameters that can be grouped under the broad headings growth conditions, characteristics of the material being grown, and experimental configuration, setup and design.This review attempts to describe the principles behind the traveling solvent technique and the various experimental variables. Guidelines are detailed to provide the information necessary to allow closer control of the crystal growth process through a systematic approach. Comparison is made between the traveling solvent technique and other crystal growth methods, in particular the more conventional stationary flux method. The use of optical heating is described in detail and successful traveling solvent growth by optical heating is reported for the first time for crystals of $Tl_5Te_3$, $Cd_3As_2$, and $FeSc_2S_4$ (using Te, Cd and FeS fluxes, respectively).

中文翻译：

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流动溶剂技术的单晶生长：综述

描述了流动溶剂技术，该技术已用于多种金属间化合物、硫属化物、半导体和氧化物材料的同质和非同质熔化材料的晶体生长。溶剂的使用、在较低温度下生长和分区过程是该方法的固有成分，可以帮助生长大的、高结构质量、高纯度的晶体。为了优化这个过程，必须仔细控制各种增长变量；然而，这可能很难实现，因为有大量独立的实验参数可以根据广泛的标题生长条件、正在生长的材料的特性以及实验配置、设置和设计进行分组。这篇综述试图描述移动溶剂技术背后的原理和各种实验变量。详细指南提供了必要的信息，以便通过系统方法更密切地控制晶体生长过程。比较了流动溶剂技术和其他晶体生长方法，特别是更传统的固定助焊剂方法。详细描述了光学加热的使用，并首次报道了 $Tl_5Te_3$、$Cd_3As_2$ 和 $FeSc_2S_4$ 晶体（分别使用 Te、Cd 和 FeS 通量）通过光学加热成功的移动溶剂生长。详细指南提供了必要的信息，以便通过系统方法更密切地控制晶体生长过程。比较了流动溶剂技术和其他晶体生长方法，特别是更传统的固定助焊剂方法。详细描述了光学加热的使用，并首次报道了 $Tl_5Te_3$、$Cd_3As_2$ 和 $FeSc_2S_4$ 晶体（分别使用 Te、Cd 和 FeS 通量）通过光学加热成功的移动溶剂生长。详细指南提供了必要的信息，以便通过系统方法更密切地控制晶体生长过程。比较了流动溶剂技术和其他晶体生长方法，特别是更传统的固定助焊剂方法。详细描述了光学加热的使用，并首次报道了 $Tl_5Te_3$、$Cd_3As_2$ 和 $FeSc_2S_4$ 晶体（分别使用 Te、Cd 和 FeS 通量）通过光学加热成功的移动溶剂生长。