Abstract This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. For more detailed information, please read the two original papers.

中文翻译：

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GaN基蓝光LED的开发和GaN及相关材料的金属有机气相外延

摘要 本文结合了两篇论文，“诺贝尔讲座：通过低温沉积缓冲层在蓝宝石上生长 GaN 以及通过 Mg 掺杂和低能电子束照射实现 p 型 GaN”，Rev. Mod。Phys., 87 (2015) 1133, and “MOCVD ofnitros”, Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. 欲了解更多详细信息，请阅读两篇原文文件。