Progress in Crystal Growth and Characterization of Materials ( IF 6.000 ) Pub Date : 2016-06-02 , DOI: 10.1016/j.pcrysgrow.2016.04.006 Hiroshi Amano
This article combines two papers, “Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation,” Rev. Mod. Phys., 87 (2015) 1133, and “MOCVD of nitrides,” Handbook of Crystal Growth Second Edition, Volume III, Part A, Chapter 16, Elsevier, 683–704, 2015. For more detailed information, please read the two original papers.