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Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As
Surface Science Reports ( IF 8.2 ) Pub Date : 2017-09-21 , DOI: 10.1016/j.surfrep.2017.09.001
H. Puszkarski , P. Tomczak

In this paper we provide a concise review of present achievements in the study of spin-wave resonance (SWR) in ferromagnetic semiconductor (Ga,Mn)As thin films. The theoretical treatment of the experimental SWR data obtained so far concentrates specifically on the spherical surface pinning (SSP) model, in which the surface spin pinning energy is expressed by configuration angles (the out-of-plane polar angle ϑ and the in-plane azimuthal angle φ) defining the direction of surface magnetization in the considered thin film. The model is based on a series expansion of the surface spin pinning energy; the terms in the series represent the respective pinning contributions from the cubic anisotropy as well as uniaxial anisotropies. Comparing theory with the reported experimental studies of SWR in thin films of the ferromagnetic semiconductor (Ga,Mn)As, we find that besides the first-order cubic anisotropy, higher-order cubic anisotropies (in the second and third orders) as well as uniaxial anisotropies (perpendicular in the first and second orders, and in-plane diagonal) occur on the surface of this material. We use our results to plot a 3D hypersurface visualizing the angle dependence of the surface spin pinning energy in configurational space. An advantage of this spatial representation is that the shape of the obtained hypersurface allows us to predict new SWR effects that have not yet been observed experimentally. Prospective experimental studies for the verification of this surface pinning model would bring new insight into the surface anisotropy phenomenon in (Ga,Mn)As thin films and help complete the knowledge in this field, the shortage of which in the literature available to date is becoming bothersome.



中文翻译:

自旋波共振作为探测铁磁薄膜表面各向异性的工具:在(Ga,Mn)As研究中的应用

在本文中,我们简要概述了铁磁半导体(Ga,Mn)As薄膜中自旋波共振(SWR)研究的最新进展。到目前为止获得的实验SWR数据的理论处理主要集中在球形表面钉扎(SSP)模型上,其中表面自旋钉扎能量由构型角(面外极角)表示。ϑ 和面内方位角 φ)定义了所考虑的薄膜中表面磁化的方向。该模型基于表面自旋钉扎能的级数展开。系列中的术语表示立方各向异性和单轴各向异性引起的各自的钉扎作用。将理论与所报道的铁磁半导体(Ga,Mn)As薄膜中SWR的实验研究进行比较,我们发现,除了一阶立方各向异性之外,高阶立方各向异性(在第二和第三阶)也是如此单轴各向异性(垂直于一阶和二阶,并且在平面内对角线)出现在该材料的表面上。我们使用我们的结果绘制3D超曲面,可视化配置空间中表面自旋钉扎能量的角度依赖性。这种空间表示的优点是,获得的超曲面的形状使我们能够预测尚未通过实验观察到的新的SWR效应。验证该表面钉扎模型的前瞻性实验研究将为(Ga,Mn)As薄膜中的表面各向异性现象带来新的见解,并有助于完成该领域的知识,迄今为止在现有文献中的短缺现象日益严重麻烦

更新日期:2017-09-21
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