We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs). Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations.

中文翻译：

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来自半导体光源的贝塞尔光束

我们报告了从包括边缘发射和表面发射半导体激光器以及发光二极管 (LED) 在内的半导体光源产生非衍射 (Bessel) 光束的最新进展。具有几到几十微米中心瓣直径的瓦特功率级贝塞尔光束是通过紧凑且高效的激光器实现的。已经证明了将高功率宽条纹半导体激光器和 LED 产生的贝塞尔光束的中心瓣尺寸减小到传统聚焦无法实现的水平的实用性。我们还讨论了一种超过功率密度限制的方法，用于具有高光束传播参数 M2 的辐射聚焦。最后，