In general, to realize full color, inorganic light-emitting diodes (LEDs) are diced from respective red-green-blue (RGB) wafers consisting of inorganic crystalline semiconductors. Although this conventional method can realize full color, it is limited when applied to microdisplays requiring high resolution. Designing a structure emitting various colors by integrating both AlGaInP-based and InGaN-based LEDs onto one substrate could be a solution to achieve full color with high resolution. Herein, we introduce adhesive bonding and a chemical wet etching process to monolithically integrate two materials with different bandgap energies for green and red light emission. We successfully transferred AlGaInP-based red LED film onto InGaN-based green LEDs without any cracks or void areas and then separated the green and red subpixel LEDs in a lateral direction; the dual color LEDs integrated by the bonding technique were tunable from the green to red color regions (530-630 nm) as intended. In addition, we studied vertically stacked subpixel LEDs by deeply analyzing their light absorption and the interaction between the top and bottom pixels to achieve ultra-high resolution.

中文翻译：

---

通过粘合剂结合实​​现基于AlGaInP的红色LED和基于InGaN的绿色LED的单片集成，以实现多色发射。

通常，为了实现全色，从由无机晶体半导体组成的相应的红-绿-蓝（RGB）晶片切割出无机发光二极管（LED）。尽管该常规方法可以实现全色，但是在应用于需要高分辨率的微型显示器时受到限制。通过将基于AlGaInP的LED和基于InGaN的LED集成到一个基板上来设计发出各种颜色的结构，可能是实现高分辨率的全色的解决方案。本文中，我们介绍了粘合剂粘结和化学湿法蚀刻工艺，以将具有不同带隙能量的两种材料单片集成，从而发出绿色和红色光。我们成功地将基于AlGaInP的红色LED膜转移到基于InGaN的绿色LED上，而没有任何裂缝或空隙区域，然后在横向方向上分离了绿色和红色子像素LED；通过键合技术集成的双色LED可按预期从绿色到红色区域（530-630 nm）进行调节。此外，我们通过深入分析垂直方向堆叠的子像素LED的光吸收以及顶部和底部像素之间的相互作用来研究垂直堆叠的子像素LED，以实现超高分辨率。