Photoelectrochemical (PEC) devices are the most similar artificial devices to the nervous system, which is expected to solve the problem of complex computer/nervous system interface (solid–liquid interface) and multifunctional integration (photoelectric fusion) required in the post-Moore era. Based on the different photocurrent ambipolar behavior and different deep ultraviolet solar-blind spectral photoresponse characteristics of α-Ga₂O₃ and β-Ga₂O₃, we designed and constructed the Ga₂O₃ porous nanostructure PEC device with an adjustable photocurrent bipolar behavior through constructing an α/β phase junction core–shell structure by adjusting the thickness and the surface state of the shell layer. The switching point of the α/β-Ga₂O₃ ambipolar photocurrent shifts toward negative values with the increase of β-Ga₂O₃ shell layer thicknesses, and adjustable Boolean logic gates are prepared using the voltage as the input source with a high accuracy manipulated by solar-blind deep ultraviolet light. The controllable solar-blind logic gates based on the ambipolar photocurrent behavior of α/β-Ga₂O₃ presented in this study offer a new path for the photoelectric device multifunctional integration needed in the post-Moore era, which can be used in the creation of Ga₂O₃ half adders and full adders, as well as in the construction of four-input OR gates.

中文翻译：

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用于日盲光控制逻辑器件的 Ga2O3 多孔纳米结构相结中的光电流双极性行为


光电化学（PEC）器件是与神经系统最相似的人工器件，有望解决后摩尔时代所需的复杂计算机/神经系统接口（固液接口）和多功能集成（光电融合）问题。基于α-Ga ₂ O ₃ 和β-Ga ₂ O ，我们通过构建α/β相结核壳结构，设计并构建了具有可调光电流双极行为的Ga ₂ O ₃ 多孔纳米结构PEC器件调整壳层的厚度和表面状态。随着β-Ga ₂ O ₃ O ₃ 双极光电流的切换点向负值移动/b9> 使用电压作为输入源，通过日盲深紫外光高精度控制壳层厚度和可调布尔逻辑门。本研究提出的基于α/β-Ga ₂ O ₃ 双极性光电流行为的可控日盲逻辑门，为光电器件多功能集成提供了新途径。后摩尔时代，可用于创建 Ga ₂ O ₃ 半加器和全加器，以及构建四输入或门。