InAs_xP_1–x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAs_xP_1–x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAs_xP_1–x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAs_xP_1–x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAs_xP_1–x QDs with a composition in the range of x = 0.24–1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAs_xP_1–x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.

中文翻译：

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用于电信波长发射的闪锌矿 InAsxP1–x/InP 量子点纳米线


InP 纳米线 (NW) 中的 InAs _x P _1–x 量子点 (QD) 已成为电信波长发射的平台。这些量子点通常生长在具有纤锌矿晶相的纳米线中，但在这种情况下，需要超薄的直径来实现无缺陷的异质结构，从而使结构不太坚固。在这项工作中，我们展示了纯闪锌矿 InAs _x P _1–x QD 在 InP NW 中的生长，这使得 NW 直径增加到约 45 nm，这是通过采用 Au 辅助实现的化学束外延系统中的气液固生长。我们研究了不同成分的InP/InAs _x P _1–x 异质结构的生长，以控制沿⟨100⟩方向的直线生长并调节发射波长。有趣的是，我们发现纯InAs QD 的生长机制与InAs _x P _1–x 合金QD 的生长机制不同。这使我们能够优化不同的生长方案，以实现最终 QD NW 的直接生长。我们成功地生长了 InAs _x P _1–x 量子点，其成分在 x = 0.24–1.00 范围内。通过显微光致发光测量，我们证明了发射的可调性取决于 InAs _x P _1–x QD 组成和形态，显着地观察到电信 O 波段的发射10 nm 厚的 QD，砷含量为 80%。