Due to the high carrier mobility and direct bandgap character, indium selenide (InSe) exhibits great advantages for advanced optoelectronic applications. However, the unique optical section rule in InSe weakens the light‐matter interaction when the electric field of illuminated light is perpendicular to the c‐axis of planar InSe flake. To overcome this constraint, ultramicrotome technique is introduced to achieve vertically aligned InSe ribbons, aiming to reconfigure the optical paths for improved optical absorption and device performance. The well‐designed InSe ribbons are acquired with uniform morphology, showing an integrated structure free of cracks or fragments. First, the structural symmetry, crystal orientation, and optical anisotropy of InSe ribbon are carefully revealed by polarization‐dependent Raman spectrum, second harmonic generation (SHG), and photoluminescence measurements. Then, the back focal plane (BFP) imaging of photoluminescence distinguishes the in‐plane and out‐of‐plane dipole emission of InSe ribbons and planar InSe flakes, respectively. Notably, the ribbon exhibits new PL peaks with energy lower than the exciton peak of InSe at low temperature, which is attributed to Se vacancies. The work by introducing vertically aligned InSe nanoribbons provides a new strategy to manipulate the light‐matter interactions and defect engineering for novel optoelectronics, which can be also extended to other 2D semiconductors.

中文翻译：

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重新配置超薄切片机制作的垂直排列 InSe 带中的光学选择规则

由于高载流子迁移率和直接带隙特性，硒化铟（InSe）在先进光电应用中表现出巨大的优势。然而，当照明光的电场垂直于光的电场时，InSe独特的光学截面规则削弱了光与物质的相互作用。C‐平面 InSe 片的轴。为了克服这一限制，引入了超薄切片机技术来实现垂直排列的 InSe 带，旨在重新配置光路以改善光吸收和器件性能。精心设计的InSe带材具有均匀的形貌，呈现出无裂纹或碎片的完整结构。首先，通过偏振相关拉曼光谱、二次谐波产生（SHG）和光致发光测量仔细揭示了 InSe 带的结构对称性、晶体取向和光学各向异性。然后，光致发光的后焦平面（BFP）成像分别区分 InSe 带和平面 InSe 片的面内和面外偶极子发射。值得注意的是，带材在低温下表现出新的 PL 峰，其能量低于 InSe 的激子峰，这归因于 Se 空位。通过引入垂直排列的 InSe 纳米带，这项工作提供了一种新的策略来操纵新型光电子学的光物质相互作用和缺陷工程，该策略也可以扩展到其他二维半导体。