Sn-doped lead halide perovskites (LHPs) have attracted considerable attention for their lower bandgap and lower toxicity. While it is well-established that Sn doping easily introduces a lot of structural defects into LHP films, the extent to which these defects impact carrier dynamics has yet to be fully elucidated. Herein, we take Sn-doped MAPbBr₃ films as an example to explore the influence of Sn doping on their carrier dynamics. The results show that Sn doping can simultaneously introduce many fillable electron traps and unfillable hole traps, consequently instigating an ultrafast carrier capture process. This further elicits long-lived internal charge separation between band edge and trap states or between two kinds of trap states, thereby enabling these carriers to persist for up to ∼2.6 μs. Our findings suggest that Sn doping potentially serves as an effective strategy to prolong the carrier lifetime in LHPs, which could pave the way for potential applications within Sn-based perovskites.

中文翻译：

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Sn 掺杂 MAPbBr3 钙钛矿薄膜中陷阱诱导的长寿命内部电荷分离

锡掺杂卤化铅钙钛矿（LHP）因其较低的带隙和较低的毒性而引起了广泛的关注。虽然众所周知，Sn 掺杂很容易在 LHP 薄膜中引入许多结构缺陷，但这些缺陷对载流子动力学的影响程度尚未完全阐明。在此，我们以Sn掺杂的MAPbBr ₃薄膜为例，探讨Sn掺杂对其载流子动力学的影响。结果表明，Sn掺杂可以同时引入许多可填充电子陷阱和不可填充空穴陷阱，从而引发超快载流子捕获过程。这进一步引发了带边和陷阱态之间或两种陷阱态之间的长寿命内部电荷分离，从而使这些载流子能够持续长达~2.6 μs。我们的研究结果表明，锡掺杂可能是延长 LHP 载流子寿命的有效策略，这可能为锡基钙钛矿的潜在应用铺平道路。