Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the reliability of integrated circuits based on miniaturized transistors. Here, the effect of a crystallographic structure change in InGaO [indium gallium oxide (IGO)] thin-films on the DIBL was investigated. Preferentially oriented IGO (po-IGO) thin-film transistors (TFTs) have outstanding device performances with a field-effect mobility of 81.9 ± 1.3 cm²/(V s), a threshold voltage (V_TH) of 0.07 ± 0.03 V, a subthreshold swing of 127 ± 2.0 mV/dec, and a current modulation ratio of (2.9 ± 0.2) × 10¹¹. They also exhibit highly reliable electrical characteristics with a negligible V_TH shift of +0.09 (−0.14) V under +2 (−2) MV/cm and 60 °C for 3600 s. More importantly, they reveal strong immunity to the DIBL of 17.5 ± 1.2 mV/V, while random polycrystalline In₂O₃ (rp-In₂O₃) and IGO (rp-IGO) TFTs show DIBL values of 197 ± 5.3 and 46.4 ± 1.2 mV/V, respectively. This is quite interesting because the rp- and po-IGO thin-films have the same cation composition ratio (In/Ga = 8:2). Given that the lateral diffusion of oxygen vacancies from the source/drain junction to the channel region via grain boundaries can reduce the effective length (L_eff) of the oxide channel, this improved immunity could be attributed to suppressed lateral diffusion by preferential growth. In practice, the po-IGO TFTs have a longer L_eff than the rp-In₂O₃ and -IGO TFTs even with the same patterned length. The effect of the crystallographic-structure-dependent L_eff variation on the DIBL was corroborated by technological computer-aided design simulation. This work suggests that the atomic-layer-deposited po-IGO thin-film can be a promising candidate for next-generation electronic devices composed of the miniaturized oxide transistors.

中文翻译：

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ALD 生长的优先取向氧化铟镓晶体管对漏极引起的势垒降低具有很强的抗扰性

漏极诱导势垒降低（DIBL）是降低基于小型化晶体管的集成电路可靠性的最关键障碍之一。在此，研究了 InGaO [氧化铟镓 (IGO)] 薄膜晶体结构变化对 DIBL 的影响。优先取向IGO（po-IGO）薄膜晶体管（TFT）具有出色的器件性能，场效应迁移率为81.9±1.3 cm ² /（V s），阈值电压（V _TH）为0.07±0.03 V，亚阈值摆幅为 127 ± 2.0 mV/dec，电流调制比为 (2.9 ± 0.2) × 10 ¹¹。它们还表现出高度可靠的电气特性，在 +2 (−2) MV/cm 和 60 °C 下持续 3600 秒， V _TH偏移可忽略不计，为 +0.09 (−0.14) V。更重要的是，它们表现出对 17.5 ± 1.2 mV/V 的 DIBL 的强大免疫力，而随机多晶 In ₂ O ₃ (rp-In ₂ O ₃ ) 和 IGO (rp-IGO) TFT 显示 197 ± 5.3 和 46.4 的 DIBL 值分别为 ± 1.2 mV/V。这非常有趣，因为 rp- 和 po-IGO 薄膜具有相同的阳离子组成比（In/Ga = 8:2）。鉴于氧空位通过晶界从源极/漏极结到沟道区的横向扩散可以减少氧化物沟道的有效长度（L _eff），这种抗扰度的提高可以归因于优先生长抑制横向扩散。实际上，即使具有相同的图案长度， po-IGO TFT也比rp-In ₂ O _{3和-IGO TFT具有更长的}L _eff 。技术计算机辅助设计模拟证实了依赖于晶体结构的L _eff变化对 DIBL 的影响。这项工作表明，原子层沉积的 po-IGO 薄膜有望成为由小型化氧化物晶体管组成的下一代电子器件的候选者。