A novel low- ZnGaSnO ceramic was prepared, and the phase composition and microstructural evolution were investigated. According to Rietveld refinement, TEM, and Raman spectroscopy, ZnGaSnO ceramics had a cubic spinel structure in which Zn1 occupied the tetrahedral sites, and Zn2/Ga1/Sn1 occupied the octahedral sites. The relative density and packing fraction significantly influence the and × of ZnGaSnO ceramics, respectively. Meanwhile, the P–V–L theory indicates that the contribution rate of Sn–O bonds to bond ionicity is 29.2 %, and that of Ga–O bonds to lattice energy is 37.5 %. The ZnGaSnO ceramics exhibit the best microwave dielectric properties ( = 10.6, × = 88,725 GHz, and τ = −25.1 ppm/°C) when sintered at 1320 °C. Given these advantages, ZnGaSnO ceramic has certain potential applications in millimeter-wave technology.

中文翻译：

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新型尖晶石结构Zn3Ga2SnO8陶瓷的微波介电性能和化学键

制备了一种新型低ZnGaSnO陶瓷，并研究了其相组成和微观结构演变。根据Rietveld精修、TEM和拉曼光谱，ZnGaSnO陶瓷具有立方尖晶石结构，其中Zn1占据四面体位点，Zn2/Ga1/Sn1占据八面体位点。相对密度和填充率分别显着影响 ZnGaSnO 陶瓷的 和 ×。同时，P-V-L理论表明Sn-O键对键离子性的贡献率为29.2%，Ga-O键对晶格能的贡献率为37.5%。在 1320 °C 下烧结时，ZnGaSnO 陶瓷表现出最佳的微波介电性能（= 10.6，× = 88,725 GHz，τ = -25.1 ppm/°C）。鉴于这些优点，ZnGaSnO陶瓷在毫米波技术中具有一定的潜在应用。