Codoped zinc oxide thin films with indium and gallium (IGZO) were deposited on soda-lime glass substrates by the ultrasonic chemical spray (USP) technique. The influence of the mechanical grinding process of Zn precursor (zinc acetate, AcZn) and the In and Ga concentrations was analyzed. The grinding process was carried out in a planetary ball mill, with a ball:/precursor ratio of 4:1, and a constant rotation speed of 300 RPM. The starting solutions were prepared at a molar concentration of 0.2 and variable In and Ga atomic concentration (1, 1.5, 2, 2.5 and 3 at%). The deposition conditions were kept constant, substrate temperature of 450 °C and deposition time of 7 min. Structural, morphological, optical, and electrical properties were analyzed. From the structural analysis a preferential orientation along the (101) plane for dominant In concentrated IGZO films was observed, whereas for dominant Ga concentrated was the (002) plane. The average optical transmission was in the range of 83–90%, confirming the high transparency of all the deposited films. The bandgap values, E_g, showed slight variations, from 3.43 to 3.53 eV. The best electrical properties were obtained in the IGZO films with an In:Ga ratio of 1.5:1 [IGZO(1.5:1)], evaluated by the figure of merit, 3.50 × 10^–3 (Ω/□)⁻¹, calculated for an optical transmission of 86% and a sheet resistance of 63 Ω/□. According to the obtained results, the IGZO thin films deposited by the USP technique, are potentially applicable in the field of optoelectronics, mainly as transparent electrode.

通过超声波化学喷涂（USP）技术将铟和镓共掺杂氧化锌薄膜（IGZO）沉积在钠钙玻璃基板上。分析了 Zn 前驱体（醋酸锌，AcZn）的机械研磨过程以及 In 和 Ga 浓度的影响。研磨过程在行星式球磨机中进行，球:/前体比为4:1，恒定转速为300 RPM。起始溶液以 0.2 的摩尔浓度和可变的 In 和 Ga 原子浓度（1、1.5、2、2.5 和 3 at%）制备。沉积条件保持恒定，基底温度为450℃，沉积时间为7分钟。分析了结构、形态、光学和电学特性。从结构分析中观察到，主要 In 集中的 IGZO 薄膜沿 (101) 面优先取向，而主要 Ga 集中的是 (002) 面。平均光学透射率在 83-90% 范围内，证实了所有沉积薄膜的高透明度。带隙值 E _g显示出从 3.43 eV 到 3.53 eV 的轻微变化。 In:Ga 比例为 1.5:1 [IGZO(1.5:1)] 的 IGZO 薄膜获得了最佳的电性能，通过品质因数评估，计算为3.50 × 10 ^–3 (Ω/□) ^-1 。光透射率为 86%，薄层电阻为 63 Ω/□。根据所获得的结果，通过USP技术沉积的IGZO薄膜在光电子领域具有潜在的应用前景，主要是作为透明电极。