Much effort has been expended on controlling the point defects and eliminating the double-layer structures in the CuZnSnSe (CZTSe) absorber layer of CZTSe solar cells to improve their efficiency. In this study, a sputtering technique was used to deposit CuSe and ZnSn films as CZTSe precursors; moreover, the temperature of the low-temperature annealing process was controlled to create different reaction pathways towards the synthesis of CZTSe; this was done to study the effects of the temperature and the selected reaction pathway on the morphology of the CZTSe absorber layer and the concentration of the point defects. Moreover, several techniques, including X-ray diffraction analysis (XRD), Raman spectroscopy, photoluminescence (PL), UV–vis-NIR spectrometers, transmission electron microscopy (TEM), capacitance-voltage (CV) measurements, and energy-dispersive X-ray spectroscopy (EDS), were used to characterize the CZTSe thin films and CZTSe solar cells. It was discovered that manipulating the temperature of the low-temperature annealing process could be used to control which reaction pathway was followed to synthesise CZTSe, suppress Sn loss and the formation of the ZnSe phase, influence the morphology, structure, compositional uniformity and concentration of the point defects of the CZTSe films, and alter the thickness of the MoSe layer. It is anticipated that this type of systematic study will provide insight into how point defects and the nanostructure of CZTSe materials affect the characteristics of solar cells; furthermore, the studies should inspire new approaches to solving the current limitations of CZTSe solar cells, thus promoting the future development of high-efficiency solar cells.

中文翻译：

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控制硒化温度升温反应途径对 Cu2ZnSnSe4 薄膜太阳能电池缺陷浓度的影响

为了提高 CZTSe 太阳能电池的效率，人们在控制点缺陷和消除 CuZnSnSe (CZTSe) 吸收层中的双层结构方面付出了很大的努力。在本研究中，采用溅射技术沉积 CuSe 和 ZnSn 薄膜作为 CZTSe 前驱体；此外，控制低温退火过程的温度以创建不同的反应途径来合成CZTSe；这样做是为了研究温度和所选反应途径对 CZTSe 吸收层形态和点缺陷浓度的影响。此外，还有多种技术，包括 X 射线衍射分析 (XRD)、拉曼光谱、光致发光 (PL)、紫外-可见-近红外光谱仪、透射电子显微镜 (TEM)、电容电压 (CV) 测量和能量色散 X射线光谱 (EDS) 用于表征 CZTSe 薄膜和 CZTSe 太阳能电池。研究发现，控制低温退火过程的温度可以控制合成CZTSe的反应途径，抑制Sn损失和ZnSe相的形成，影响CZTSe的形貌、结构、成分均匀性和浓度。 CZTSe 薄膜的点缺陷，并改变 MoSe 层的厚度。预计此类系统研究将深入了解 CZTSe 材料的点缺陷和纳米结构如何影响太阳能电池的特性；此外，这些研究应该激发新的方法来解决CZTSe太阳能电池目前的局限性，从而促进高效太阳能电池的未来发展。