I–III–VI semiconductor quantum dot light-emitting diodes (QLEDs) have emerged as promising lighting and display devices, celebrated for their eco-friendly nature and high-performance characteristics. Nevertheless, the conventional preparation of narrowband-emitting I–III–VI colloidal quantum dots (QDs) often involves intricate and multi-step purification processes. Herein, we present a straightforward strategy for synthesizing highly luminescent AgInxGa_1−xS₂/AgGaS₂ (AIGS/AGS) core/shell QDs through a hydrofluoric acid (HF)-assisted one-pot synthesis. The resulting AIGS/AGS QDs exhibit pure green emission at 532 nm with a narrow full width at half maximum (FWHM) of 33 nm. Notably, HF treatment plays a pivotal role in removing the adsorption layer, composed of indium sulfide and low-crystallinity gallium sulfide, from the surface of AIGS cores. This process facilitates uniform shell growth of AGS, resulting in notable improvements in color purity and photostability compared to QDs synthesized without HF treatment. As a proof of concept, we fabricated QLED devices by spin-coating AIGS/AGS QDs prepared using HF-assisted one-pot synthesis as the luminescent layer. These QLEDs showcase a narrow electroluminescence (EL) FWHM of 36 nm, a low turn-on voltage of 2.2 V, and an external quantum efficiency of 0.75%, setting a new benchmark for brightness at 2747 cd m⁻². The simplicity of this one-pot synthesis route, eliminating the need for intermediate purification steps, establishes a practical and scalable method for large-scale production of environmentally friendly I–III–VI QDs. The present work is anticipated to drive the widespread application of environmentally friendly I–III–VI QDs in QLED technology.

中文翻译：

---

通过 HF 辅助一锅合成策略实现高效窄发射 AgInxGa1−xS2/AgGaS2 量子点及其发光二极管

I–III–VI 半导体量子点发光二极管 (QLED) 已成为有前景的照明和显示设备，以其环保性和高性能特性而闻名。然而，窄带发射 I-III-VI 胶体量子点 (QD) 的常规制备通常涉及复杂的多步骤纯化过程。在此，我们提出了一种通过氢氟酸（HF）辅助的一锅法合成高发光AgInxGa _{1− x} S ₂ /AgGaS ₂ (AIGS/AGS)核/壳量子点的简单策略。所得 AIGS/AGS QD 在 532 nm 处呈现纯绿光发射，半峰全宽 (FWHM) 为 33 nm。值得注意的是，HF 处理在去除 AIGS 核表面由硫化铟和低结晶度硫化镓组成的吸附层方面发挥着关键作用。该工艺有利于 AGS 壳的均匀生长，与未经 HF 处理合成的 QD 相比，色纯度和光稳定性显着提高。作为概念验证，我们通过旋涂 AIGS/AGS QD 来制造 QLED 器件，这些 QD 使用 HF 辅助一锅法合成作为发光层制备。这些 QLED 具有 36 nm 的窄电致发光 (EL) FWHM、2.2 V 的低开启电压和 0.75% 的外部量子效率，设定了 2747 cd m ^-2亮度的新基准。这种一锅法合成路线简单，无需中间纯化步骤，为大规模生产环境友好的 I–III–VI 量子点建立了一种实用且可扩展的方法。目前的工作预计将推动环保的 I–III–VI QD 在 QLED 技术中的广泛应用。