CuInS₂ (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu–In–Zn–S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron–phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.

中文翻译：

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用于高性能红外发光二极管的刚性 CuInS2/ZnS 核/壳量子点

CuInS ₂ (CIS) 量子点 (QD) 代表了一类重要的胶体材料，由于其低毒性和独特的光学特性，具有广泛的应用潜力。尽管 ZnS 壳涂层已被认为是增强光学性能的关键方法，但阳离子交换的发生历来导致 Cu-In-Zn-S 合金 QD 的意外形成，从而导致吸收和光致发光方面出现有害的蓝移。 PL) 光谱曲线。在这项研究中，我们提出了一种简便的一锅合成策略，旨在阻碍阳离子交换过程并促进 CIS 核心量子点上 ZnS 壳的生长。刚性 ZnS 壳对电子-声子相互作用和俄歇复合的抑制导致 CI​​S/ZnS 核/壳 QD 表现出较宽的近红外 (NIR) 发射覆盖范围和 92.1% 的显着 PL 量子产率。这种效应促进了高性能、基于量子点的近红外发光二极管的制造，该二极管具有迄今为止此类材料的最佳稳定性。