Organic field-effect transistors (OFETs) have become promising components for a wide range of applications in the fast-growing field of organic electronics. Nevertheless, with the increasing need for high-performance OFETs, it is crucial to understand and challenge the contact resistance in these devices, because it represents a critical bottleneck that can significantly suppress the overall performance. Herein, we report the evaluation of the voltage dependence of the injection barrier in pentacene-based OFET devices with Au or Ag electrodes. The injection barrier of the device with Au electrodes showed an Ohmic nature with a barrier of approximately 170 ∼ 200 meV, whereas the barrier in the device with Ag electrodes behaved as a Schottky contact and the zero-field injection barrier reached 552 ± 2 meV.

中文翻译：

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并五苯基有机场效应晶体管上欧姆接触和肖特基接触的性质

有机场效应晶体管 (OFET) 已成为快速发展的有机电子领域中具有广泛应用前景的元件。然而，随着对高性能 OFET 的需求不断增加，了解和挑战这些器件中的接触电阻至关重要，因为它是一个关键瓶颈，可以显着抑制整体性能。在此，我们报告了具有 Au 或 Ag 电极的并五苯基 OFET 器件中注入势垒电压依赖性的评估。 Au电极器件的注入势垒表现出欧姆性质，势垒约为170 ∼ 200 meV，而Ag电极器件的势垒表现为肖特基接触，零场注入势垒达到552 ± 2 meV。