Mn-doped semiconductor luminescent materials have garnered considerable attention due to the unique optical properties derived from both the intrinsic host and Mn dopants. This combination provides greater flexibility in modulating the photoluminescence of Mn dopants. Over the past three decades, significant efforts have been devoted to manipulating Mn-related emission across various semiconductor host materials, spanning from metal chalcogenide nanocrystals to halide perovskite nanocrystals and metal chalcogenide supertetrahedral nanoclusters (MCSNs). Among these, MCSNs emerge as a distinctive model characterized by homogeneous host sizes, precise dopant location, and ordered linking modes. This unique structure enables a deeper understanding of the atomic- and molecular-level modulation mechanism of Mn-related emission, compared to that of classical Mn-doped nanocrystals. In this review, we delve into the current developments in the photoluminescence investigation of Mn-doped/containing MCSNs, with a specific focus on the modulation of Mn-related emission performance, including aspects such as emission wavelength, intensity, decay lifetime, and efficiency. The discussion also explores the underlying modulation mechanisms, benefiting from the site accuracy of Mn dopants in MCSNs. Finally, prospective challenges and research tasks for future exploration in this field have been elaborated.

中文翻译：

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使用原子级精确的金属硫属化物半导体纳米团簇对 Mn2+ 相关发射进行原子和分子水平调制

由于本征主体和锰掺杂剂具有独特的光学性质，锰掺杂半导体发光材料引起了相当大的关注。这种组合在调节锰掺杂剂的光致发光方面提供了更大的灵活性。在过去的三十年中，人们致力于操纵各种半导体基质材料中与锰相关的发射，从金属硫族化物纳米晶体到卤化物钙钛矿纳米晶体和金属硫族化物超四面体纳米团簇（MCSN）。其中，MCSN 作为一种独特的模型出现，其特征是均匀的主体尺寸、精确的掺杂剂位置和有序的连接模式。与经典的锰掺杂纳米晶体相比，这种独特的结构使人们能够更深入地了解锰相关发射的原子和分子水平调制机制。在这篇综述中，我们深入研究了掺锰/含锰 MCSN 的光致发光研究的最新进展，特别关注与锰相关的发射性能的调制，包括发射波长、强度、衰变寿命和效率等方面。讨论还探讨了潜在的调制机制，受益于 MCSN 中锰掺杂剂的位点精度。最后，阐述了该领域未来探索的前瞻性挑战和研究任务。