Copper iodide (CuI) has been in the spotlight as a promising p-type semiconducting material due to its excellent electrical property and low fabrication temperature. Here, we propose a novel approach for constructing solution-processable p-type CuI TFTs sandwiched by both Al₂O₃ interfacial and passivation layers and demonstrate the improvement mechanism for device performance. The pristine CuI TFTs with optimized Al₂O₃-based sandwiched architecture exhibited enhanced device performance, such as a high current on–off ratio of 1.01 × 10⁵, a low hysteresis of 0.76 V, and a subthreshold swing of 0.35 V decade⁻¹. These parameters exceed the performance of CuI TFTs in previous reports to the best of our knowledge. We further systematically studied the effective roles of the Al₂O₃-based sandwiched architecture, inducing the creation of the iodine vacancy and decrease in the hole concentration, as well as improved crystallinity and grain size. Based on the results, high-performance CuI TFTs with excellent stability were achieved, sustaining the electrical performance after repeated operation over 100 times. Thus, this work can provide a new insight on solution-processable p-type CuI TFTs with Al₂O₃-based sandwiched architecture for developing high-performance complementary logic circuits.

中文翻译：

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具有基于 Al2O3 的夹层结构的可溶液加工 CuI 薄膜对高性能 p 型晶体管应用的影响

碘化铜（CuI）由于其优异的电性能和较低的制造温度而作为一种有前途的p型半导体材料而受到关注。在这里，我们提出了一种新的方法来构建夹在 Al ₂ O ₃界面层和钝化层之间的可溶液加工的 p 型 CuI TFT，并展示了器件性能的改进机制。具有优化的基于 Al ₂ O ₃的夹层结构的原始 CuI TFT表现出增强的器件性能，例如 1.01 × 10 ⁵的高电流开关比、0.76 V 的低磁滞和 0.35 V 十进制的亚阈值摆幅^{- 1} .据我们所知，这些参数超出了之前报告中 CuI TFT 的性能。我们进一步系统地研究了Al ₂ O ₃基夹层结构的有效作用，诱导碘空位的产生和空穴浓度的降低，以及改善结晶度和晶粒尺寸。基于这些结果，我们实现了具有优异稳定性的高性能 CuI TFT，在重复运行超过 100 次后仍能保持电气性能。因此，这项工作可以为具有基于Al ₂ O ₃的夹层架构的可溶液加工的p型CuI TFT提供新的见解，用于开发高性能互补逻辑电路。