One possible pathway toward reducing the cost of III–V solar cells is to remove them from their growth substrate by spalling fracture, and then reuse the substrate for the growth of multiple cells. Here we consider the growth of III–V cells on spalled GaAs(100) substrates, which typically have faceted surfaces after spalling. To facilitate the growth of high-quality cells, these faceted surfaces should be smoothed prior to cell growth. In this study, we show that these surfaces can be smoothed during organometallic vapor-phase epitaxy growth, but the choice of epilayer material and modification of the various surfaces by impurities/dopants greatly impacts whether or not the surface becomes smooth, and how rapidly the smoothing occurs. Representative examples are presented along with a discussion of the underlying growth processes. Although this work was motivated by solar cell growth, the methods are generally applicable to the growth of any III–V device on a nonplanar substrate.

中文翻译：

---

III-V 外延层、太阳能电池和其他器件的 OMVPE 生长过程中剥落 GaAs(100) 基板上刻面的原位平滑：表面杂质/掺杂剂的影响

降低 III-V 太阳能电池成本的一种可能途径是通过剥落断裂将其从生长基板上移除，然后重新使用该基板来生长多个电池。在这里，我们考虑 III-V 电池在剥落的 GaAs(100) 基板上的生长，这些基板在剥落后通常具有刻面。为了促进高质量细胞的生长，这些多面表面应在细胞生长之前平滑。在这项研究中，我们表明，在有机金属气相外延生长过程中，这些表面可以变得光滑，但是外延层材料的选择和杂质/掺杂剂对各种表面的修饰极大地影响了表面是否变得光滑，以及表面变得光滑的速度如何。发生平滑。介绍了代表性的例子，并讨论了潜在的增长过程。尽管这项工作的动机是太阳能电池生长，但这些方法通常适用于非平面基板上任何 III-V 族器件的生长。