Hybrid organohalide perovskites have recently attracted significant attention due to their outstanding photovoltaic (PV) conversion capabilities in optoelectronic devices. Herein, to develop a highly sensitive and self-powered perovskite-based PV photodiode (PVPD), we implement the selective use of poly(methyl methacrylate) (PMMA) as noise-current-reducing passivation layers on both the front and rear sides of a CHNHPbI (MAPbI) perovskite light-absorbing layer. It is found that the PMMA layers effectively suppress carrier recombinations at the interfaces, resulting in fairly high power conversion efficiency of 17.6%. Additionally, the double-sided PMMA-passivated MAPbI PVPD shows exceptional specific detectivity values (1.0 × 10 Jones from the dark current and 1.3 × 10 Jones from the noise current), significantly outperforming conventional MAPbI PVPDs without passivation layers. The device also exhibits a very wide linear dynamic response range of ∼139 dB, with rapid rise and decay response times of 57 and 18 μs, respectively. The double-sided PMMA-passivated MAPbI PVPD also is shown to be highly durable in terms of its dynamic responses even after a prolonged storage period of 1500 h. These results suggest that advanced interface engineering using double PMMA passivation layers holds great potential for developing high-performance self-powered perovskite photodetectors for a range of optoelectronic applications.

中文翻译：

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具有双面聚甲基丙烯酸甲酯钝化层的高效自供电 CH3NH3Pbl3 钙钛矿光电二极管

混合有机卤化物钙钛矿由于其在光电器件中出色的光伏（PV）转换能力而最近引起了广泛关注。在此，为了开发高灵敏度、自供电的钙钛矿基光伏光电二极管（PVPD），我们选择性地使用聚（甲基丙烯酸甲酯）（PMMA）作为器件正面和背面的降噪电流钝化层。 CHNHPbI (MAPbI)钙钛矿光吸收层。结果发现，PMMA层有效地抑制了界面处的载流子复合，从而获得了17.6%的相当高的功率转换效率。此外，双面 PMMA 钝化的 MAPbI PVPD 显示出优异的比探测率值（暗电流为 1.0 × 10 琼斯，噪声电流为 1.3 × 10 琼斯），明显优于没有钝化层的传统 MAPbI PVPD。该器件还具有~139 dB 的非常宽的线性动态响应范围，快速上升和衰减响应时间分别为 57 和 18 μs。即使在 1500 小时的长时间储存​​后，双面 PMMA 钝化的 MAPbI PVPD 的动态响应也具有高度耐用性。这些结果表明，使用双 PMMA 钝化层的先进界面工程在开发用于一系列光电应用的高性能自供电钙钛矿光电探测器方面具有巨大潜力。