Mn-doped GaN crystals of a-plane and (11−22) plane were grown by the ammonothermal method. The Mn concentrations were characterized on the order of 10²⁰ cm⁻³ by glow discharge mass spectrometry, and the valence state of Mn in GaN crystals was measured to be a mixed valence state of Mn²⁺ and Mn³⁺ using X-ray photoelectron spectroscopy. Raman scattering spectroscopy shows that due to the doping of Mn, the interaction potential energy between Ga and N ions changes, and the longitudinal optical mode E₁(LO) shifts towards a lower frequency. The Raman scattering spectra of Mn–Mg_k cation complexes formed by unintentional doping of Mg on the (11−22) plane were studied.

中文翻译：

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氨热法生长Mn掺杂GaN拉曼散射光谱研究

采用氨热法生长了a-面和(11−22)面的Mn掺杂GaN晶体。通过辉光放电质谱法表征Mn浓度为10 ²⁰ cm ^-3量级，并且使用X射线光电子测量GaN晶体中Mn的价态为Mn ²⁺和Mn ³⁺的混合价态光谱学。拉曼散射光谱表明，由于Mn的掺杂，Ga和N离子之间的相互作用势能发生变化，纵向光模E ₁ (LO)向较低频率移动。研究了（11−22）面上无意掺杂 Mg 形成的Mn-Mg _k阳离子配合物的拉曼散射光谱。