Diamond possesses extremely excellent properties, which make it a potentially transformative material in an extensive range of applications. Herein, diamonds were synthesized in a FeNiCo–C system with B₂S₃ as an additive by a temperature-gradient growth method at high temperature and high pressure (HPHT) conditions. The effects of the B₂S₃ additive in the FeNiCo–C system on diamond crystallization were characterized using Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) measurements. FTIR result shows the presence of positive-charged N⁺ in the diamond crystal synthesized with the B₂S₃ additive, and its concentration was estimated to be around 30 ppm. Moreover, the XPS measurements confirm that N⁺ can combine with boron to form a B–N bond. Furthermore, the Hall effect result indicates that the resistivity of the diamond crystal synthesized with B₂S₃ was reduced to 3.89 × 10 Ω cm, whereas, the resistivity of the diamond synthesized with the same weight of B₂S₃ additive along with Ti/Cu as the nitrogen removal agent dropped sharply to 2.51 × 10⁻¹ Ω cm.

中文翻译：

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B2S3 添加剂对 HPHT 条件下金刚石结晶的影响

金刚石具有极其优异的性能，这使其成为具有广泛应用前景的潜在变革性材料。本文以B ₂ S ₃作为添加剂，在FeNiCo-C体系中通过高温高压（HPHT）条件下的温度梯度生长法合成了金刚石。使用拉曼光谱、傅里叶变换红外 (FTIR) 光谱和 X 射线光电子能谱 (XPS) 测量来表征 FeNiCo-C 体系中B ₂ S ₃添加剂对金刚石结晶的影响。 FTIR结果表明，用B ₂ S ₃添加剂合成的金刚石晶体中存在带正电的N ⁺，其浓度估计为30 ppm左右。此外，XPS 测量证实 N ⁺可以与硼结合形成 B-N 键。此外，霍尔效应结果表明，用B ₂ S ₃合成的金刚石晶体的电阻率降低至3.89×10 Ω cm，而用相同重量的B ₂ S ₃添加剂与Ti合成的金刚石的电阻率降低至3.89×10 Ω cm。作为脱氮剂的/Cu急剧下降至2.51×10 ^-1 Ω cm。