We optimized the annealing temperature of the Hf_0.5Zr_0.5O₂/TiN thin-film heterostructure via a multiscale analysis of the remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. The remnant polarization and minimum domain size were closely related to the relative orthorhombic and monoclinic phase contents. The minimum domain size and optimum remnant polarization and capacitance were obtained by thermal annealing of Hf_0.5Zr_0.5O₂/TiN/Si at 500 and 600 °C, respectively. The results suggest that the minimum domain size is more important than the sheer magnitude of the remnant polarization because of the retention and fatigue of switchable polarization in ferroelectric nanodevices. This study can contribute to the development of ultralow-power logic transistors and next-generation nonvolatile memory devices.

中文翻译：

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退火温度对铁电氧化铪最小磁畴尺寸的影响

_{我们通过对残余极化、晶相、最小铁电畴尺寸和平均晶粒尺寸的多尺度分析，优化了Hf 0.5} Zr _0.5 O ₂ /TiN薄膜异质结构的退火温度。残余极化和最小域尺寸与相对斜方和单斜相含量密切相关。通过分别在 500 和 600 °C 下对 Hf _0.5 Zr _0.5 O ₂ /TiN/Si进行热退火，获得了最小磁畴尺寸以及最佳剩余极化和电容。结果表明，由于铁电纳米器件中可切换极化的保留和疲劳，最小域尺寸比剩余极化的绝对大小更重要。这项研究有助于超低功耗逻辑晶体管和下一代非易失性存储器件的开发。