Utilizing the FEniCS Project and Python programming, we conduct a comprehensive characterization and analysis of the -type doped layer in double quantum wells made of GaAs and featuring AlGaAs barriers through self-consistent Schrödinger–Poisson simulations. The main findings reveal that the dimensions of the system and the doping layer significantly influence the electronic properties, energy levels, Fermi energy, wave functions, and electron density. Upon doping the intermediate barrier, electrons exhibit notable migration from the doping region to the quantum well zones, particularly pronounced for thin barriers. Conversely, for large barriers, the emergence of a new well, akin to a real quantum well, imposes constraints on the movement of charge carriers. The electron density varies in accordance with the impurity density, which assumes significant importance as the quantum well and barrier width are reduced. The Fermi energy level, which play a crucial role in semiconductors, rises with a decrease in quantum well width or an increase in doped layer width and n-type doping density, remaining almost unaffected by variations in barrier width.

中文翻译：

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[式略]双GaAs/AlGaAs量子阱型掺杂调制

利用 FEniCS 项目和 Python 编程，我们通过自洽薛定谔-泊松模拟，对由 GaAs 制成的双量子阱中的 型掺杂层进行了全面的表征和分析，并以 AlGaAs 势垒为特色。主要发现表明，系统和掺杂层的尺寸显着影响电子特性、能级、费米能、波函数和电子密度。在掺杂中间势垒后，电子表现出从掺杂区域到量子阱区的显着迁移，对于薄势垒尤其明显。相反，对于大势垒，类似于真正的量子阱的新阱的出现，对载流子的运动施加了限制。电子密度根据杂质密度而变化，随着量子阱和势垒宽度的减小，杂质密度变得非常重要。费米能级在半导体中起着至关重要的作用，随着量子阱宽度的减小或掺杂层宽度和n型掺杂密度的增加而上升，而几乎不受势垒宽度变化的影响。