Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching −3.9 dBm at 440 GHz for a single unit in CMOS and −10.7 dBm at 1.01 THz for a 42-element array in SiGe BiCMOS. The smallest power of a 1 kHz bandwidth signal at 420 GHz that can be detected has improved by 100 million times. These and the expected improvements from the ongoing activities should be sufficient to support high resolution imaging with a range of up to several hundred meters, gas sensing up to ∼1 THz, and communication over ∼1000 m. The silicon IC technologies enable integration of complex systems into a small form factor and reduction of manufacturing cost. When broad deployment of submillimeter wave systems for everyday life applications becomes necessary, the silicon IC infrastructure will be the most capable to support the high-volume manufacturing need.

中文翻译：

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使用硅电子集成电路实现 0.3–1.0 THz 电磁波的应用

在过去的 15 年里，硅亚毫米波电子器件的输出功率增加了 1000 倍以上，对于 CMOS 中的单个单元，在 440 GHz 时达到 -3.9 dBm；在 42 元件阵列中，在 1.01 THz 时达到 -10.7 dBm。硅锗 BiCMOS。可检测到的420GHz 1kHz带宽信号的最小功率提高了1亿倍。这些以及正在进行的活动的预期改进应足以支持范围达数百米的高分辨率成像、高达〜1 THz的气体传感以及〜1000 m的通信。硅 IC 技术能够将复杂的系统集成到较小的外形尺寸中并降低制造成本。当需要在日常生活应用中广泛部署亚毫米波系统时，硅 IC 基础设施将最有能力支持大批量制造需求。