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The Cu/TiO2 adsorbent modified by Ce-doping removes trace phosphorus impurities from circular hydrogen of a polysilicon chemical vapor deposition furnace
Separation and Purification Technology ( IF 8.6 ) Pub Date : 2024-03-18 , DOI: 10.1016/j.seppur.2024.127148
Ze Luo , Qingxin Liang , Yuanshuai Qi , Guoqiang Huang

There is an urgent need for efficient and cost-effective adsorbents for the removal of trace hydrogen phosphide (PH) from the circular hydrogen systems in the polysilicon chemical vapor deposition furnaces. In this study, a straightforward and cost-effective method was used to synthesize a highly efficient adsorbent (Ce-Cu/TiO) for PH removal using TiO as the carrier and CuO as the active substance. Experimental findings demonstrated that optimal Ce doping amounts (n:n = 20:1) markedly enhanced the adsorbent's performance, with an adsorption capacity reaching as high as 149.14 mg g. Material characterization results indicated that Ce positively influenced the uniform dispersion of Cu on the TiO surface, and Ce doping increased the adsorbed oxygen content of the adsorbent, consequently enhancing its oxidation performance. The investigation of the reaction mechanism and causes of adsorbent deactivation revealed that the depletion of active substances (CuO) in the adsorbent and the accumulation of products such as CuP and phosphates are the primary factors contributing to its deactivation. Furthermore, high-temperature calcination could restore the activity of the adsorbent, indicating its great potential for engineering applications.

中文翻译:

掺杂Ce改性的Cu/TiO2吸附剂去除多晶硅化学气相沉积炉循环氢气中的微量磷杂质

迫切需要高效且经济的吸附剂来去除多晶硅化学气相沉积炉循环氢气系统中的微量磷化氢 (PH)。在本研究中,采用一种简单且经济有效的方法,以 TiO2 为载体、CuO 为活性物质,合成了一种用于去除 PH 的高效吸附剂 (Ce-Cu/TiO)。实验结果表明,最佳Ce掺杂量(n:n = 20:1)显着提高了吸附剂的性能,吸附容量高达149.14 mg g。材料表征结果表明,Ce 对 Cu 在 TiO 表面的均匀分散产生积极影响,并且 Ce 掺杂增加了吸附剂的吸附氧含量,从而增强了其氧化性能。对吸附剂失活反应机理和原因的研究表明,吸附剂中活性物质(CuO)的消耗以及CuP和磷酸盐等产物的积累是导致其失活的主要因素。此外,高温煅烧可以恢复吸附剂的活性,表明其具有巨大的工程应用潜力。
更新日期:2024-03-18
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