Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nanoscale nonvolatile memory devices and neuromorphic computing applications. In this study, we developed a novel mixed-dimensional design for RRAM devices, incorporating zero-dimensional quantum dots (QDs), two-dimensional MoS₂, and a TiO₂ switching layer to achieve prominent interfacial switching behaviors. Compared with typical filamentary RRAM devices, the proposed heterostructure featured a light-sensitive QDs/MoS₂ layer that allowed for bias-controllable resistive changes during the set and reset processes without abrupt switching. This was endowed by effective electron–hole pair separations upon excitation and the generation of a thin molybdenum oxide (MoO_x) layer due to the accumulation of oxygen ions at the interface between MoS₂ and TiO₂. The ITO/QDs/MoS₂/TiO₂/Pt RRAM device exhibited an on/off ratio of 10 with improved endurance under 515 nm laser illumination and wavelength-dependent resistive switching behavior, making it useful for multilevel storage. Furthermore, the heterostructured device demonstrated synaptic characteristics with enhanced potentiation and depression nonlinearities and asymmetry factors, revealing its potential for future neuromorphic applications.

中文翻译：

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具有界面模拟开关特性的混合维 QD/MoS2/TiO2 异质结构电阻式随机存取存储器的设计，用于潜在的神经形态计算

电阻式随机存取存储器 (RRAM) 是下一代纳米级非易失性存储设备和神经形态计算应用最有前途的候选者之一。在这项研究中，我们为 RRAM 器件开发了一种新颖的混合维度设计，结合了零维量子点 (QD)、二维 MoS ₂和 TiO ₂切换层，以实现显着的界面切换行为。与典型的丝状 RRAM 器件相比，所提出的异质结构具有光敏 QD/MoS ₂层，允许在设置和重置过程中实现偏置可控的电阻变化，而无需突然切换。这是由于激发时有效的电子-空穴对分离以及由于氧离子在MoS ₂和TiO ₂之间的界面处积累而产生薄的氧化钼(MoO _x )层而赋予的。 ITO/QDs/MoS ₂ /TiO ₂ /Pt RRAM 器件的开/关比为 10，在 515 nm 激光照射下具有更高的耐用性和波长相关的电阻开关行为，使其可用于多级存储。此外，异质结构装置表现出具有增强的增强和抑制非线性和不对称因子的突触特征，揭示了其未来神经形态应用的潜力。