With the improvement of surface passivation, bulk recombination is becoming an indispensable and decisive factor to assess the theoretical limiting efficiency () of crystalline silicon (c‐Si) solar cells. In simultaneous consideration of surface and bulk recombination, a modified model of evaluation is developed. Surface recombination is directly depicted with contact selectivity while bulk recombination is revised on the aspects of ideality factor and wafer thickness. The of the double‐side silicon heterojunction (SHJ) and double‐side tunneling‐oxide passivating contact (TOPCon) solar cells are numerically simulated using the new model as 28.99% and 29.19%, respectively. However, the of single‐side TOPCon solar cells, the more practicable scenario, is only 27.79%. Besides, the of the double‐side SHJ solar cells would exceed the double‐side TOPCon solar cells if the recombination parameter of the non‐contacted area is higher than 0.6 fA/cm2, instead of perfect passivation. Our results are instructive in accurately assessing efficiency potential and accordingly optimizing design strategies of c‐Si solar cells.

中文翻译：

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采用俄歇理想因子和晶圆厚度修正的先进晶体硅太阳能电池的理论极限效率评估

随着表面钝化的改进，体复合正成为评估晶体硅（c-Si）太阳能电池理论极限效率（）的不可或缺的决定性因素。在同时考虑表面和体复合的情况下，开发了一种改进的评估模型。表面复合直接用接触选择性来描述，而体复合则在理想因子和晶圆厚度方面进行了修改。使用新模型对双面硅异质结（SHJ）和双面隧道氧化物钝化接触（TOPCon）太阳能电池进行数值模拟，其效率分别为28.99%和29.19%。然而，更实用的场景单面TOPCon太阳能电池的效率仅为27.79%。此外，如果非接触区域的复合参数高于0.6 fA/cm，双面SHJ太阳能电池的性能将超过双面TOPCon太阳能电池2，而不是完美钝化。我们的结果对于准确评估效率潜力并相应优化 c-Si 太阳能电池的设计策略具有指导意义。