Memory devices with a high speed and low energy are highly desired for next-generation nanoelectronics. Here, using the switchable polarization in magnesium-substituted zinc oxide, a simple metal oxide with a polar wurtzite structure, the tunability of the Schottky barrier formed at the ferroelectric–metal interfaces is demonstrated. Through comprehensive analyses involving microstructural study and scanning probe microscopy, our work establishes the effect of magnesium doping, leading to the emergence of ferroelectricity and switchable polarization, in solution-processed zinc oxide films on glass substrates, demonstrated through both spectroscopic probing of piezoresponse and global poling techniques. Concomitantly, with magnesium doping, the electromechanical performance of the films is enhanced by ∼180%. Furthermore, doped films exhibit bias-dependent asymmetric resistive switching behavior attributed to the polarity-modulated back-to-back Schottky diode configuration leading to off/on resistance ratios of approximately 100. Our research findings unveil switchable polarization and a polarity-controlled Schottky barrier, and thus, modulation of electronic transport in solution-processed simple metal oxide films with a hexagonal wurtzite crystal structure thereby raises the translation prospects of ferroelectric electronic devices for information storage and memristive applications.

中文翻译：

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纤锌矿铁电体中肖特基势垒的极性控制

下一代纳米电子学非常需要高速、低能耗的存储器件。在这里，利用镁取代的氧化锌（一种具有极性纤锌矿结构的简单金属氧化物）中的可切换极化，证明了在铁电-金属界面处形成的肖特基势垒的可调性。通过涉及微观结构研究和扫描探针显微镜的综合分析，我们的工作确定了镁掺杂的影响，导致玻璃基板上溶液处理的氧化锌薄膜中铁电性和可切换极化的出现，这通过压电响应和全局的光谱探测得到证明。极化技术。与此同时，通过镁掺杂，薄膜的机电性能提高了约 180%。此外，掺杂薄膜表现出依赖于偏置的不对称电阻开关行为，这归因于极性调制的背对背肖特基二极管配置，导致关断/导通电阻比约为 100。我们的研究结果揭示了可切换的极化和极性控制的肖特基势垒因此，具有六方纤锌矿晶体结构的溶液处理的简单金属氧化物薄膜中电子传输的调制从而提高了铁电电子器件在信息存储和忆阻应用中的转化前景。