High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect’s ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.

高对比度光学检测磁共振对于在室温下读出孤立缺陷色心的自旋是一个有价值的特性。自旋活性单缺陷中心已经在宽带隙材料中进行了研究，包括金刚石、碳化硅和六方氮化硼，每种材料都具有相关的应用优势。我们报告了在 GaN 中两种不同的明亮、孤立的缺陷中心中发现了光学检测到的磁共振。在一组中，我们发现百分之几的负光学检测磁共振与亚稳态电子态相关，而在另一组中，我们发现高达 30% 的正光学检测磁共振与基态和光激发电子态相关。我们检查每个缺陷种类的自旋对称轴，并对单个缺陷的基态自旋建立相干控制。鉴于半导体主机的成熟度，这些结果对于可扩展和集成的量子传感应用来说是有希望的。