当前位置: X-MOL 学术Org. Electron. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Carrier mobility in organic semiconductors with an exponential density of states under the framework of admittance spectroscopy
Organic Electronics ( IF 3.2 ) Pub Date : 2024-01-24 , DOI: 10.1016/j.orgel.2024.106996
Zhendong Ge , Lei Wang , Dawei Gu , Tianyou Zhang

The carrier transport in amorphous organic semiconductors with an exponential density of states is systematically studied under the framework of admittance spectroscopy. Due to the exponential distribution, the slope of the double logarithmic curve of current density versus voltage is expressed as b+2, where b relates to the width of the density of states. And the mobility is proportional to nb, where n is the density of carrier. In this case, the peak frequencies of the negative differential susceptance and imaginary part of impedance turn out to be functions of parameter b. Therefore, the relation between transit time and mobility will be a linear function of parameter b. Applying our model to interpret experimental data of both small molecular and polymeric materials are illustrated. The contributions of electric field and of carrier density to mobility are discussed.



中文翻译:

导纳谱框架下具有指数态密度的有机半导体中的载流子迁移率

在导纳谱的框架下系统地研究了具有指数态密度的非晶有机半导体中的载流子输运。由于呈指数分布,电流密度与电压的双对数曲线的斜率表示为b +2,其中b与态密度的宽度有关。迁移率与n b成正比,其中n是载流子密度。在这种情况下,负微分电纳的峰值频率和阻抗的虚部结果是参数b的函数。因此,渡越时间和迁移率之间的关系将是参数b的线性函数。说明了应用我们的模型来解释小分子和聚合物材料的实验数据。讨论了电场和载流子密度对迁移率的贡献。

更新日期:2024-01-24
down
wechat
bug