Here we present the effects of Methyl Red (MR) doping on the electrical properties of the MoS₂ field effect transistor (FET) in in-situ experimental system where the doping and electrical measurement are carried out in a single ultra-high vacuum chamber. A single-layered MoS₂ flake was used as channel material for the FET preparation. N-type doping by MR was confirmed by the left shift of threshold voltage (V_th) and the surface vibrational change measured by Raman spectroscopy. The n-doping by MR is implied by the Fermi level shift towards greater binding energy with MR coverage, as proven by an X-ray photoelectron spectroscopy (XPS) measurement. It is estimated from XPS that the MoS₂-FET device may detect the doping effect from the sub-monolayer MR. MR was detected on the MoS₂ surface by the Time-of-Flight Secondary Ionization Mass Spectroscopy (ToF-SIMS). The findings may pave the way for innovations in electronic device design, with potential implications for fields ranging from nanoelectronics to sensor technology.

在这里，我们在原位实验系统中展示了甲基红（MR）掺杂对MoS ₂场效应晶体管（FET）电学性能的影响，其中掺杂和电学测量在单个超高真空室中进行。单层MoS ₂薄片用作FET制备的沟道材料。通过阈值电压（ V _{th ）}的左移和拉曼光谱测量的表面振动变化证实了MR的N型掺杂。X 射线光电子能谱 (XPS) 测量证明，MR 覆盖范围内的费米能级向更大结合能的转变暗示了 MR 的 n 掺杂。从XPS估计MoS ₂ -FET器件可以检测来自亚单层MR的掺杂效应。通过飞行时间二次电离质谱 (ToF-SIMS)在 MoS _{2表面检测到 MR。}这些发现可能为电子设备设计的创新铺平道路，对从纳米电子学到传感器技术等领域都有潜在影响。