Area-selective atomic layer deposition (AS-ALD) has drawn significant attention in the past decade because of the potential applications in bottom-up processing, which enables fabricating nanostructures at the atomic level without multiple patterning and lithographic processing that could easily cause alignment issues. Although AS-ALD has been demonstrated using various self-assembled monolayers (SAMs), it is still challenging to develop wet SAM deposition for AS-ALD that is suitable for industrial and semiconductor processes. In this work, we demonstrate highly effective AS-ALD of Al₂O₃ on Co/SiO₂ patterned wafers using fluorinated thiol in both solution and vapor phase. Compared with conventional SAMs using alky-thiols, the fluorinated-thiol SAMs demonstrate greater blocking ability against ALD precursors owing to excellent hydrophobicity. Furthermore, much shorter deposition times can be achieved in vaporizable fluorinated thiol molecules, improving processing throughput and productivity. Most importantly, the SAM regeneration and redosing processes can further enhance the selectivity of AS-ALD, opening a promising avenue to realize the bottom-up approach in practical semiconductor applications.

中文翻译：

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金属/电介质图案上的区域选择性原子层沉积：两性涂层、可蒸发抑制剂和再生处理

区域选择性原子层沉积 (AS-ALD) 在过去十年中引起了极大的关注，因为它在自下而上的处理中具有潜在的应用，它可以在原子水平上制造纳米结构，而无需多次图案化和光刻处理，这很容易导致对准问题. 尽管 AS-ALD 已经使用各种自组装单层 (SAM) 进行了演示，但开发适用于工业和半导体工艺的 AS-ALD 湿法 SAM 沉积仍然具有挑战性。_{在这项工作中，我们展示了 Al 2} O ₃在 Co/SiO ₂上的高效 AS-ALD在溶液和气相中使用氟化硫醇的图案化晶圆。与使用烷基硫醇的传统 SAM 相比，氟化硫醇 SAM 由于具有优异的疏水性，对 ALD 前体表现出更强的阻断能力。此外，在可蒸发的氟化硫醇分子中可以实现更短的沉积时间，从而提高加工吞吐量和生产率。最重要的是，SAM 再生和重投过程可以进一步提高 AS-ALD 的选择性，为在实际半导体应用中实现自下而上的方法开辟了一条有前途的途径。