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Wafer-Scale 1T′ MoTe2 for Fast Response Self-Powered Wide-Range Photodetectors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-06-01 , DOI: 10.1021/acsami.3c05902 Jiatong Mao 1 , Youqi Zhang 1 , Yinuo Zhang 1 , Yunan Lin 1 , Yao Feng 1 , Yongqi Hu 1 , Muhammad Shafa 1 , Yi Pan 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-06-01 , DOI: 10.1021/acsami.3c05902 Jiatong Mao 1 , Youqi Zhang 1 , Yinuo Zhang 1 , Yunan Lin 1 , Yao Feng 1 , Yongqi Hu 1 , Muhammad Shafa 1 , Yi Pan 1
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The semimetal-based photodetector possesses the intrinsic advantage of high response speed, low power consumption, and wide-range photoresponse. Here, we report the synthesis and application of 1 inch wafer-scale polycrystalline few layer 1T′-MoTe2 on the SiO2/Si substrate by employing a modified chemical vapor deposition method of predeposition of precursors. A continuous film with seamlessly stitched micrometer scale grains has been realized, and the pure 1T′ phase was confirmed by Raman spectroscopy. An asymmetric metal electrode photodetector device of Pd-MoTe2-Au was designed and fabricated by using shadow mask-assisted UHV deposition. By measuring the self-powered photocurrent under the illumination of Xe lamp, we show that the device is sensitive to a wide spectra range (λ = 320–1200 nm) while maintaining high performance of the ON/OFF ratio (∼103), responsivity (1.2 A/W), and specific detectivity (7.68 × 1012 Jones). Under 450, 648, and 850 nm pulsed laser illumination, the response time achieves tens of microsecond scale. The device shows polarized photoresponse as well. Our work may promote the potential application of a self-powered high-performance photodetector based on 1T′-MoTe2.
中文翻译：
用于快速响应自供电宽范围光电探测器的晶圆级 1T' MoTe2
半金属基光电探测器具有响应速度快、功耗低、光响应范围广等固有优势。在这里，我们报告了通过采用改进的前驱体预沉积化学气相沉积方法在 SiO 2 /Si 衬底上合成和应用 1 英寸晶圆级多晶少层 1T'-MoTe 2 。实现了具有无缝缝合微米级晶粒的连续薄膜，并通过拉曼光谱证实了纯 1T' 相。Pd-MoTe 2非对称金属电极光电探测器器件-Au 是通过使用荫罩辅助 UHV 沉积设计和制造的。通过测量氙灯照射下的自供电光电流，我们表明该器件对宽光谱范围 (λ = 320–1200 nm) 敏感，同时保持高性能的开/关比 (∼10 3 )，响应度 (1.2 A/W) 和比探测度 (7.68 × 10 12琼斯)。在450、648和850 nm脉冲激光照射下，响应时间达到几十微秒量级。该设备也显示出偏振光响应。我们的工作可能会促进基于1T'-MoTe 2的自供电高性能光电探测器的潜在应用。
更新日期：2023-06-01
中文翻译：
用于快速响应自供电宽范围光电探测器的晶圆级 1T' MoTe2
半金属基光电探测器具有响应速度快、功耗低、光响应范围广等固有优势。在这里，我们报告了通过采用改进的前驱体预沉积化学气相沉积方法在 SiO 2 /Si 衬底上合成和应用 1 英寸晶圆级多晶少层 1T'-MoTe 2 。实现了具有无缝缝合微米级晶粒的连续薄膜，并通过拉曼光谱证实了纯 1T' 相。Pd-MoTe 2非对称金属电极光电探测器器件-Au 是通过使用荫罩辅助 UHV 沉积设计和制造的。通过测量氙灯照射下的自供电光电流，我们表明该器件对宽光谱范围 (λ = 320–1200 nm) 敏感，同时保持高性能的开/关比 (∼10 3 )，响应度 (1.2 A/W) 和比探测度 (7.68 × 10 12琼斯)。在450、648和850 nm脉冲激光照射下，响应时间达到几十微秒量级。该设备也显示出偏振光响应。我们的工作可能会促进基于1T'-MoTe 2的自供电高性能光电探测器的潜在应用。
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