The aim of research on neuromorphic computing is exploring artificial neuron and synaptic devices with high performance. In this context, two-dimensional (2D) materials have received broad attention due to their advantages of low power consumption and high electrostatic controllability. Here, we demonstrated an artificial synaptic transistor based on the 2D SnS2/T-layer van der Waals (vdW) heterostructure, where the T-layer refers to the 2D h-BN treated by O2 plasma. Relying on the charge trapping mechanism of the T-layer, synaptic characteristics such as the excitatory postsynaptic current, short-term plasticity, and long-term potentiation (LTP) are emulated. Moreover, these synaptic characteristics can be further modulated by light stimulation. Under the illumination of 820 nm wavelength, the nonlinearity of LTP is as low as −0.19, and the symmetricity is 39.4, which is superior to most of the 2D artificial synaptic devices reported to date. Our results demonstrate the great prospects of plasma-treated 2D vdW heterostructures for neuromorphic applications.

中文翻译：

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等离子体处理的 SnS2/h-BN 范德华异质结构的突触特性

神经形态计算的研究目的是探索具有高性能的人工神经元和突触装置。在此背景下，二维（2D）材料由于其低功耗和高静电可控性等优点而受到广泛关注。在这里，我们展示了一种基于 2D SnS2/T 层范德华 (vdW) 异质结构的人工突触晶体管，其中 T 层是指经 O2 等离子体处理的 2D h-BN。依靠 T 层的电荷捕获机制，模拟了兴奋性突触后电流、短期可塑性和长期增强 (LTP) 等突触特性。此外，这些突触特征可以通过光刺激进一步调节。在820 nm波长的照射下，LTP的非线性低至-0.19，对称性为39.4，优于目前报道的大多数二维人工突触装置。我们的结果证明了等离子体处理的 2D vdW 异质结构在神经形态应用中的巨大前景。