We demonstrate an ion-implanted triple-zone junction termination extension (JTE) for vertical GaN p-n diodes. Due to the spatial distribution of fixed charge in the triple-zone JTE structure, the peak electric fields at the contact metal edge and at the edge of the JTE are significantly reduced compared to conventional approaches. The forward and reverse characteristics of diodes with conventional single-zone JTE and the triple-zone JTE explored here have been studied and compared experimentally. GaN p-n diodes fabricated using the triple-zone JTE obtain an experimentally measured maximum breakdown voltage of 1.27 kV, appreciably higher than the 1.01 kV achieved using the single-zone JTE structure. The triple-zone JTE design also provides a wider window for fabrication processing and epitaxial wafer growth to achieve the high breakdown voltage compared to single-zone designs. The triple-zone JTE is promising for cost-effective fabrication of GaN power electronics.

中文翻译：

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用于垂直 GaN pn 二极管的离子注入三区分级结终端扩展

我们展示了用于垂直 GaN pn 二极管的离子注入三区结终端扩展 (JTE)。由于三区 JTE 结构中固定电荷的空间分布，与传统方法相比，接触金属边缘和 JTE 边缘处的峰值电场显着降低。已通过实验研究和比较了具有传统单区 JTE 和此处探索的三区 JTE 的二极管的正向和反向特性。使用三区 JTE 制造的 GaN pn 二极管获得了 1.27 kV 的实验测量最大击穿电压，明显高于使用单区 JTE 结构实现的 1.01 kV。与单区设计相比，三区 JTE 设计还为制造工艺和外延晶圆生长提供了更宽的窗口，以实现高击穿电压。三区 JTE 有望用于经济高效地制造 GaN 电力电子器件。