Broad area lasers operating at high power with improved beam quality are needed in many applications. In typical high-power diode lasers with asymmetric facet coating, it is observed that the carrier density fails to completely pin above threshold with significant levels of lateral carrier accumulation (LCA) at the front facet stripe edges. Systematic experimental data are presented to quantify such non-pinning and its effect on lateral far field in multiple diode lasers with varying longitudinal temperature variation (LTV) using spontaneous emission imaging. LTV is quantified and correlated with the carrier accumulation and its dependence on facet reflectivity and cavity length. Results of measurements under continuous wave (CW) and quasi-CW conditions are used to regulate the level of heating and, hence, to isolate the contribution of LTV and optical field profile. Conventional long resonator asymmetric-coated devices show a twofold increase in LCA from threshold to 10 A current at the front stripe edge, but LCA varies less than 20% for lower facet asymmetry or short resonators. Similarly, strong temperature driven far field broadening is observed for conventional long-resonator asymmetric-coated devices (3°–4° variation with temperature at 10 A), which is strongly reduced for lower facet asymmetry or short resonators (<1° at 10 A).

中文翻译：

---

由于大面积高功率二极管激光器的纵向温度变化，条纹边缘处的载流子密度非钉扎和加宽的横向远场

许多应用都需要以高功率运行且光束质量得到改善的大面积激光器。在具有不对称小平面涂层​​的典型高功率二极管激光器中，观察到载流子密度无法完全固定在阈值以上，在前小平面条纹边缘处有显着水平的横向载流子积累 (LCA)。提出了系统的实验数据，以使用自发发射成像量化这种非钉扎及其对具有不同纵向温度变化 (LTV) 的多二极管激光器中的横向远场的影响。LTV 被量化并与载流子积累及其对面反射率和腔长的依赖性相关联。连续波 (CW) 和准连续波条件下的测量结果用于调节加热水平，因此，隔离 LTV 和光场剖面的贡献。传统的长谐振器非对称涂层器件显示 LCA 从阈值到前条纹边缘的 10 A 电流增加了两倍，但对于下面不对称或短谐振器，LCA 变化小于 20%。类似地，对于传统的长谐振器不对称涂层器件（在 10 A 时随温度变化 3°–4°）观察到强烈的温度驱动的远场展宽，对于下端面不对称或短谐振器（<1° 在10 一个）。