An accurate method to extract the thermal resistance (RTH) of GaN-on-Si high electron mobility transistors (HEMTs) is proposed. It is shown that by pulsing the substrate, instead of drain or gate as done in the existing methods, one can significantly reduce the effect of traps on the extraction process. To demonstrate this, HEMTs are fabricated on two wafers, similar in all respects except that one has a carbon-doped buffer and the other does not. We obtain the same value of RTH for the two wafers using the proposed method, while the values are significantly different using the method based on drain pulsing. The extracted RTH is also used in a compact model to demonstrate the accuracy of the proposed method.

中文翻译：

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一种提取 GaN-on-Si HEMT 热阻的准确方法

提出了一种精确提取硅基氮化镓高电子迁移率晶体管 (HEMT) 热阻 (RTH) 的方法。结果表明，通过对基板进行脉冲处理，而不是像现有方法那样对漏极或栅极进行脉冲处理，可以显着降低陷阱对提取过程的影响。为了证明这一点，HEMT 在两个晶圆上制造，除了一个具有碳掺杂缓冲器而另一个没有之外，在所有方面都相似。我们使用所提出的方法为两个晶圆获得了相同的 RTH 值，而使用基于漏极脉冲的方法则该值明显不同。提取的 RTH 也用于紧凑模型，以证明所提出方法的准确性。