Catalytic growth of ultrathin silicon nanowires (SiNWs) provides ideal 1D channel materials for the construction of high-performance field effect transistors, where the diameter, uniformity and crystalline qualities are of utmost importance. In this work, a high-fidelity moulding growth of orderly ultrathin monocrystalline SiNWs, with diameter of $17\pm 2\mathrm{n}\mathrm{m}$, has been accomplished within tightly confined nanogrooves. A continuous and deterministic groove-width-transition or squeezing strategy has also been developed to accomplish an effective cross-section tailoring of the as-grown SiNW channels, while enabling a close-to-unity growth filling rate within the guiding grooves. Finally, a size-dependent adatom-searching model is proposed to explain how a monocrystalline SiNWs can be obtained even at such a low growth temperature of < 350 ℃. These results indicate a feasible catalytic growth fabrication route to implement monolithic 3D integration of advanced in-memory-computing and neuromorphic electronics.

超薄硅纳米线 (SiNW) 的催化生长为构建高性能场效应晶体管提供了理想的一维通道材料，其中直径、均匀性和晶体质量至关重要。在这项工作中，有序超薄单晶 SiNW 的高保真成型生长，直径为$17\pm \mathrm{2个}\mathrm{n}\mathrm{米}$, 已在紧密限制的纳米槽内完成。还开发了一种连续且确定的凹槽宽度过渡或挤压策略，以实现对生长的 SiNW 通道的有效横截面剪裁，同时在引导凹槽内实现接近统一的生长填充率。最后，提出了一种依赖于尺寸的吸附原子搜索模型来解释如何在 < 350 ℃ 的低生长温度下获得单晶 SiNW。这些结果表明了一种可行的催化生长制造路线，可以实现先进的内存计算和神经形态电子产品的单片 3D 集成。