Defect engineering is a promising technique that can activate nitrogen by injecting electrons into the anti-bonding molecular orbital of nitrogen through anion vacancies. Moreover, compared to a single component, Schottky junctions can effectively overcome rapid electron recombination, thereby significantly enhancing photoelectron utilization efficiency. In this work, we prepared Mo modified MoO₃ nanosheets with abundant oxygen vacancies by a solvothermal method and investigated the effect of synergistic interactions between Schottky junctions and oxygen vacancies on the photocatalytic performance of N₂ reduction reaction (NRR). The photocatalytic nitrogen fixation performance of Mo@MoO₃ nanosheets (MoO₃-6) reached 50.78 μmol·g⁻¹·h⁻¹ without any scavenger, which was about 3 times that of commercial MoO₃. The Schottky barrier creates a built-in electric field generating charge transfer channels during the photocatalytic reaction, while the oxygen vacancies trap electrons to activate N₂, and together with Mo, broaden the light absorption range of the catalyst, facilitating more efficient transfer of excited electrons to the active site. The synergetic advantages of Schottky junctions and oxygen vacancies are exploited in advancing the photocatalytic effect, providing new opportunities and challenges for the development of metal oxide-based materials.

缺陷工程是一种很有前途的技术，它可以通过阴离子空位将电子注入氮的反键合分子轨道来激活氮。而且，与单一元件相比，肖特基结可以有效克服快速电子复合，从而显着提高光电子利用效率。在这项工作中，我们通过溶剂热法制备了具有丰富氧空位的Mo修饰的MoO _{3纳米片，并研究了肖特基结与氧空位之间的协同相互作用对N 2}还原反应（NRR）光催化性能的影响。_{Mo@MoO 3}纳米片(MoO ₃ -6)的光催化固氮性能达到50.78 μmol·g⁻¹ ·h ⁻¹不含任何清除剂，约为商业MoO ₃的3倍。肖特基势垒在光催化反应过程中产生内置电场，产生电荷转移通道，而氧空位捕获电子以激活 N ₂，并与 Mo 一起拓宽催化剂的光吸收范围，促进激发态更有效的转移电子到活性位点。肖特基结和氧空位的协同优势被用于推进光催化效应，为金属氧化物基材料的发展提供了新的机遇和挑战。