Black-phosphorus-like (BP-like) Bi(1 1 0) thin film, a potential large band gap two-dimensional (2D) topological insulator (TI) candidate that hosts a non-dissipative topological edge state, has attracted a lot of attention in recent years. However, the Bi(1 1 0) thin film with a large bulk band gap and topological edge states has not been definitely confirmed experimentally. Here, high-quality BP-like Bi(1 1 0) thin film is epitaxially grown on a semiconductor SnSe substrate. Employing scanning tunneling microscopy/spectroscopy (STM/S), the BP-like structure was determined, and the corresponding electronic structure was also investigated. In addition, a distinct quasi-squared moiré pattern was observed, and the electronic states far away from Fermi energy in the 1BL Bi(1 1 0) film are significantly modulated by the moiré pattern spatially; instead, the electronic states near the Fermi energy are less influenced by the moiré pattern. Importantly, we also observed the enhanced states at the edge of 1BL and 2BL Bi(1 1 0) films, especially for 2BL film, with a clear sign of edge state peak extending to 2 nm depth, suggesting that 2BL BP-like Bi(1 1 0) on SnSe is a potential 2D TI. As a result, our research provides a platform for the further topological investigation of the BP-like Bi(1 1 0) thin film.

类黑磷 (BP-like) Bi(1  1  0) 薄膜是一种潜在的大带隙二维 (2D) 拓扑绝缘体 (TI) 候选材料，具有非耗散拓扑边缘状态，吸引了很多关注近年来备受关注。然而，具有大体带隙和拓扑边缘态的Bi(1  1 0) 薄膜尚未通过实验得到明确证实。 在这里，高质量的类 BP Bi(1  1 0) 在半导体 SnSe 衬底上外延生长薄膜。采用扫描隧道显微镜/光谱学 (STM/S)，确定了类 BP 结构，并研究了相应的电子结构。 此外，观察到明显的准方形莫尔条纹，1BL Bi(1 1 0)薄膜中远离费米能量的电子态 在空间上受到莫尔图案的显着调制；相反，费米能量附近的电子态受莫尔图案的影响较小。 重要的是，我们还观察到 1BL 和 2BL Bi(1 1  0) 薄膜边缘的增强态，尤其是 2BL 薄膜，边缘态峰值明显延伸到 2 nm 深度，表明 2BL BP-like Bi ( 1  1 0) 在 SnSe 上是潜在的 2D TI。因此，我们的研究为进一步研究类 BP Bi(1 1  0  ) 薄膜的拓扑结构提供了平台。