Thickness-Dependent Dielectric Screening in Few-Layer Phosphorus,The Journal of Physical Chemistry Letters

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Thickness-Dependent Dielectric Screening in Few-Layer Phosphorus
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2023-05-23 , DOI: 10.1021/acs.jpclett.3c00608
Chengxiang Chen ₁ , Zhenyu Wang ₁ , Bo Zhang _{1,

2} , Zixuan Zhang ₁ , Jinying Zhang ₁ , Yonghong Cheng ₁ , Kai Wu ₁ , Jun Zhou ₁

Affiliation

The dielectric screening plays a critical role in determining the fundamental electronic properties in semiconductor devices. In this work, we report a noncontact and spatially resolved method, based on Kelvin probe force microscopy (KPFM), to obtain the inherent dielectric screening of black phosphorus (BP) and violet phosphorus (VP) as a function of the thickness. Interestingly, the dielectric constant of VP and BP flakes increases monotonically and then saturates to the bulk value, which is consistent with our first-principles calculations. The dielectric screening in VP has a much weaker dependence on the number of layers. This could be ascribed to a strong electron orbital overlap between two adjacent layers of VP, resulting in a strong interlayer coupling. The findings of our work are significant both for fundamental studies of dielectric screening and for more technical applications in nanoelectronic devices based on layered 2D materials.

中文翻译：

少层磷中的厚度依赖性介电筛选

电介质屏蔽在确定半导体器件的基本电子特性方面起着至关重要的作用。在这项工作中，我们报告了一种基于开尔文探针力显微镜 (KPFM) 的非接触式空间分辨方法，以获得作为厚度函数的黑磷 (BP) 和紫磷 (VP) 的固有介电屏蔽。有趣的是，VP 和 BP 薄片的介电常数单调增加，然后饱和到体积值，这与我们的第一性原理计算一致。VP 中的电介质屏蔽对层数的依赖性要弱得多。这可归因于 VP 的两个相邻层之间的强烈电子轨道重叠，导致强烈的层间耦合。

更新日期：2023-05-23

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