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Application of n-Polysilicon Rear Emitter for High-Efficiency p-TOPCon Solar Cells
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2023-04-21 , DOI: 10.1002/adts.202300078
Muhammad Quddamah Khokhar 1 , Hasnain Yousuf 2 , Xinyi Fan 2 , Seungyong Han 2 , Youngkuk Kim 3 , Suresh Kumar Dhungel 3 , Junsin Yi 1, 2, 3
Affiliation  

This study entails the examination of tunnel oxide passivated contact on p-type silicon wafers (p-TOPCon) passivated with n-polysilicon for a solar cell by using Quokka-3, a numerical simulation program. The effects of the thickness, bulk lifetime, resistivity, and selectivity of charge carriers due to the polysilicon passivated contact are investigated. Through such n-polysilicon passivated contact, the back-emitter solar cells engender higher internal power owing to enhanced surface passivation. This further reduces the shading loss due to front metallization; however, the reduced minority carrier lifetime of the p-type Czochralski (Cz) wafer restricts the possibilities for high efficiency. Subsequently, the minority charge carrier lifetime of the p-type wafer conceivably becomes an obstacle to realizing TOPCon solar cells with a high conversion efficiency. This study demonstrates that a configuration suitable for the industrial manufacturing of high-efficiency solar cells is a crystalline silicon solar cell on a p-type wafer through a rear-emitter n-polysilicon passivated contact. A roadmap toward 24.87% of the p-TOPCon solar cells through the n-type polysilicon passivated contact is also devised.

中文翻译:

n 多晶硅后发射极在高效 p-TOPCon 太阳能电池中的应用

本研究需要使用数值模拟程序 Quokka-3 检查太阳能电池用 n 多晶硅钝化的 p 型硅片 (p-TOPCon) 上的隧道氧化物钝化接触。研究了多晶硅钝化接触对厚度、体寿命、电阻率和载流子选择性的影响。通过这种n-多晶硅钝化接触,背发射极太阳能电池由于增强的表面钝化而产生更高的内部功率。这进一步减少了由于正面金属化造成的遮光损失;然而,p 型直拉 (Cz) 晶圆的少数载流子寿命缩短限制了高效率的可能性。随后,p型晶圆的少数载流子寿命可能成为实现高转换效率TOPCon太阳能电池的障碍。这项研究表明,适合工业制造高效太阳能电池的配置是通过后发射极 n 多晶硅钝化接触在 p 型晶圆上构建晶体硅太阳能电池。还设计了通过n型多晶硅钝化接触实现24.87% p-TOPCon太阳能电池的路线图。
更新日期:2023-04-21
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