In recent years, metal halide perovskite materials have attracted great attention in the field of optoelectronics due to their excellent physical properties. However, there are still some problems restricting its practical application. In this paper, a high-quality CsPbBr₃ film with good crystalline quality, compact surface morphology and excellent optical properties was obtained by thermal evaporation preparation and annealing optimization. On this basis, p-NiO/CsPbBr₃/n-GaN heterojunction diode was prepared. At room temperature, the diode exhibits excellent electrical and luminous properties. The I–V curve shows typical rectification behavior. The luminous mechanism has also been deeply analyzed. In addition, the temperature dependence of the electrical properties was analyzed. According to the fitting and calculation, the temperature sensitivity coefficients for forward and reverse are 2.446 × 10⁻⁴ and −7.094 × 10⁻⁶ A/°C, and the activation energy is 0.31 eV. It is found that the ambient temperature has a great influence on the luminous properties of the diode. This study demonstrates the potential application of p-NiO/CsPbBr₃/n-GaN heterojunction diode in the field of luminescence.

近年来，金属卤化物钙钛矿材料以其优异的物理性能在光电领域引起了极大的关注。但仍存在一些问题制约其实际应用。本文通过热蒸发制备和退火优化，获得了具有良好结晶质量、致密表面形貌和优异光学性能的高质量CsPbBr _3薄膜。在此基础上，p-NiO/CsPbBr ₃制备了/n-GaN异质结二极管。在室温下，二极管表现出优异的电气和发光特性。I-V 曲线显示典型的整流行为。发光机制也得到了深入分析。此外，还分析了电性能的温度依赖性。根据拟合计算，正向和反向温度敏感系数分别为2.446×10 ^-4和-7.094×10 ^-6 A/℃，活化能为0.31 eV。发现环境温度对二极管的发光特性影响很大。_{本研究展示了p-NiO/CsPbBr 3} /n-GaN异质结二极管在发光领域的潜在应用。