Wide-Bandgap Rare-Earth Iodate Single Crystals for Superior X-Ray Detection and Imaging,Advanced Science

当前位置： X-MOL 学术 › Adv. Sci. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Wide-Bandgap Rare-Earth Iodate Single Crystals for Superior X-Ray Detection and Imaging
Advanced Science ( IF 14.3 ) Pub Date : 2023-03-22 , DOI: 10.1002/advs.202206833
Xieming Xu _{1,

2} , Fang Wang ₁ , Weiwei Xu ₁ , Hao Lu _{1,

2} , Lingfei Lv _{1,

2} , Hongyuan Sha _{1,

2} , Xiaoming Jiang ₁ , Shaofan Wu ₁ , Shuaihua Wang _{1,

3}

Affiliation

Semiconductor-based X-ray detectors with low detectable thresholds become critical in medical radiography applications. However, their performance is generally limited by intrinsic defects or unresolved issues of materials, and developing a novel scintillation semiconductor for low-dose X-ray detection is a highly urgent objective. Herein, a high-quality rare-earth iodate Tm(IO₃)₃ single crystal grown through low-cost solution processing is reported with a wide bandgap of 4.1 eV and a large atomic number of 53.2. The roles of IO and TmO groups for charge transport in the Tm(IO₃)₃ are revealed with the structural difference between the [101] and

[\bar{1} 01] $[{\bar{1}}01]$

crystal orientations. Based on anisotropic responses of material properties and detection performances, it is found that the [

\bar{1} 01 ${\bar{1}}01$

] orientation, the path with fewer IO groups, achieves a high resistivity of 1.02 × 10¹¹ Ω cm. Consequently, a single-crystal detector exhibits a low dark current and small baseline drifting due to the wide bandgap, high resistivity and less ion migration of Tm(IO₃)₃, resulting in a low detection limit of 85.2 nGy_air s⁻¹. An excellent X-ray imaging performance with a high sensitivity of 4406.6 µC Gy_air⁻¹ cm⁻² is also shown in the Tm(IO₃)₃ device. These findings provide a new material design perspective for high-performance X-ray imaging applications.

中文翻译：

用于卓越 X 射线检测和成像的宽带隙稀土碘酸盐单晶

具有低检测阈值的基于半导体的 X 射线检测器在医学射线照相应用中变得至关重要。然而，它们的性能通常受到材料固有缺陷或未解决问题的限制，开发用于低剂量 X 射线检测的新型闪烁半导体是一个非常紧迫的目标。在此，报道了通过低成本溶液工艺生长的高质量稀土碘酸盐 Tm(IO ₃ ) _{3单晶，具有 4.1 eV 的宽带隙和 53.2 的大原子序数。}I  O 和 Tm  O 基团在 Tm(IO ₃ ) ₃中的电荷传输作用通过 [101] 和

[\bar{1个} 01] $[{\bar{1}}01]$

晶体取向。基于材料特性和检测性能的各向异性响应，发现[

\bar{1个} 01 ${\bar{1}}01$

] 方向，具有较少 I  O 基团的路径，实现了 1.02 × 10 ¹¹ Ω cm的高电阻率。_{因此，由于Tm(IO 3} ) ₃的宽带隙、高电阻率和较少的离子迁移，单晶探测器表现出低暗电流和小基线漂移，导致85.2 nGy air s -1 的_低检测^限。Tm(IO ₃ ) _{3设备中还显示了出色的 X 射线成像性能和 4406.6 µC Gy}_air⁻¹ cm ⁻²的高灵敏度。这些发现为高性能 X 射线成像应用提供了新的材料设计视角。

更新日期：2023-03-22

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11