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Wide-Bandgap Rare-Earth Iodate Single Crystals for Superior X-Ray Detection and Imaging
Advanced Science ( IF 14.3 ) Pub Date : 2023-03-22 , DOI: 10.1002/advs.202206833
Xieming Xu 1, 2 , Fang Wang 1 , Weiwei Xu 1 , Hao Lu 1, 2 , Lingfei Lv 1, 2 , Hongyuan Sha 1, 2 , Xiaoming Jiang 1 , Shaofan Wu 1 , Shuaihua Wang 1, 3
Affiliation  

Semiconductor-based X-ray detectors with low detectable thresholds become critical in medical radiography applications. However, their performance is generally limited by intrinsic defects or unresolved issues of materials, and developing a novel scintillation semiconductor for low-dose X-ray detection is a highly urgent objective. Herein, a high-quality rare-earth iodate Tm(IO3)3 single crystal grown through low-cost solution processing is reported with a wide bandgap of 4.1 eV and a large atomic number of 53.2. The roles of IO and TmO groups for charge transport in the Tm(IO3)3 are revealed with the structural difference between the [101] and [ 1 ¯ 01 ] $[{\bar{1}}01]$ crystal orientations. Based on anisotropic responses of material properties and detection performances, it is found that the [ 1 ¯ 01 ${\bar{1}}01$ ] orientation, the path with fewer IO groups, achieves a high resistivity of 1.02 × 1011 Ω cm. Consequently, a single-crystal detector exhibits a low dark current and small baseline drifting due to the wide bandgap, high resistivity and less ion migration of Tm(IO3)3, resulting in a low detection limit of 85.2 nGyair s−1. An excellent X-ray imaging performance with a high sensitivity of 4406.6 µC Gyair−1 cm−2 is also shown in the Tm(IO3)3 device. These findings provide a new material design perspective for high-performance X-ray imaging applications.

中文翻译:

用于卓越 X 射线检测和成像的宽带隙稀土碘酸盐单晶

具有低检测阈值的基于半导体的 X 射线检测器在医学射线照相应用中变得至关重要。然而,它们的性能通常受到材料固有缺陷或未解决问题的限制,开发用于低剂量 X 射线检测的新型闪烁半导体是一个非常紧迫的目标。在此,报道了通过低成本溶液工艺生长的高质量稀土碘酸盐 Tm(IO 3 ) 3单晶,具有 4.1 eV 的宽带隙和 53.2 的大原子序数。I O 和 Tm O 基团在 Tm(IO 3 ) 3中的电荷传输作用通过 [101] 和 [ 1个 ¯ 01 ] $[{\bar{1}}01]$ 晶体取向。基于材料特性和检测性能的各向异性响应,发现[ 1个 ¯ 01 ${\bar{1}}01$ ] 方向,具有较少 I  O 基团的路径,实现了 1.02 × 10 11 Ω cm的高电阻率。因此,由于Tm(IO 3 ) 3的宽带隙、高电阻率和较少的离子迁移,单晶探测器表现出低暗电流和小基线漂移,导致85.2 nGy air s -1 的检测。Tm(IO 3 ) 3设备中还显示了出色的 X 射线成像性能和 4406.6 µC Gy air −1 cm −2的高灵敏度。这些发现为高性能 X 射线成像应用提供了新的材料设计视角。
更新日期:2023-03-22
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