Stabilization of CsPbBr3 Nanocrystals via Defect Passivation and Alumina Encapsulation for High-Power Light-Emitting Diodes,ACS Applied Nano Materials

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Stabilization of CsPbBr3 Nanocrystals via Defect Passivation and Alumina Encapsulation for High-Power Light-Emitting Diodes
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-03-22 , DOI: 10.1021/acsanm.2c04974
Min Wang ₁ , Zhiyong Lei ₁ , Chun Du ₁ , Yanwei Wen ₁ , Bin Shan ₁ , Kun Cao ₂ , Rong Chen ₂

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The instability of inorganic cesium lead halide perovskite quantum dots (QDs) limits their commercial applications. Here, a streamline surface nanotailoring strategy combining defect passivation and alumina infiltration and encapsulation via atomic layer deposition was employed to improve the luminescence properties and stability of QD films. Didodecyl dimethyl ammonium bromide with oleic acid pretreatment was used to reduce nonradiative recombination and photoluminescence quenching through strong bonding. Al₂O₃ infiltrated through the gaps between the QDs with ng precision control and formed a dense encapsulation barrier, which separated QDs from the influence of the external environment. The fluorescence lifetime and the overall stability of the obtained QD films were greatly improved, which have application prospects in high-power white light-emitting diodes.

中文翻译：

通过缺陷钝化和氧化铝封装稳定 CsPbBr3 纳米晶体用于高功率发光二极管

无机铯卤化铅钙钛矿量子点 (QD) 的不稳定性限制了它们的商业应用。在这里，采用通过原子层沉积结合缺陷钝化和氧化铝渗透和封装的流线型表面纳米剪裁策略来提高 QD 薄膜的发光性能和稳定性。经油酸预处理的双十二烷基二甲基溴化铵用于通过强键合减少非辐射复合和光致发光猝灭。铝₂ O ₃通过精确控制的量子点之间的缝隙渗透并形成致密的封装屏障，将量子点与外部环境的影响隔离开来。所得QD薄膜的荧光寿命和整体稳定性均有较大提高，在大功率白光发光二极管中具有应用前景。

更新日期：2023-03-22

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