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Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS2 and WS2 for Semiconductor Devices with Tunable Functionality
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-03-22 , DOI: 10.1021/acsanm.2c05561
Mina Maruyama 1 , Nanami Ichinose 2 , Yanlin Gao 1 , Zheng Liu 3 , Ryo Kitaura 2 , Susumu Okada 1
Affiliation  

Using the metal–organic chemical vapor deposition technique, we synthesized a bilayer lateral heterostucture of MoS2 and WS2, each of which layers consist of alternately arranged nanostrips of MoS2 and WS2. Transmission electron microscope images exhibit a checked pattern contrast, reflecting the three distinct interlayer metal arrangements of Mo/Mo, W/Mo (Mo/W), and W/W stacking. Theoretical calculations based on the density functional theory elucidated that the bilayer lateral heterostructure of MoS2 and WS2 exhibits complexed type-II band edge alignments depending on the interlayer metal arrangement: The conduction band edge is located at the Mo atom in a Mo/Mo sector, while the valence band edge is located at the W atom in a W/W sector. According to the complexed band edge alignment, the field-induced carrier injection behavior in the bilayer heterosheet composed of MoS2 and WS2 strips shows gate-induced trans-dimensionality, where the accumulated carrier distributions continuously vary from zero- to two-dimensional based on the applied gate voltage. Tunable carrier dimensionality can be applicable for wide areas of electronics, such as quantum dot arrays with tunable dot–dot interaction.

中文翻译:

具有可调功能的半导体器件的 MoS2 和 WS2 双层横向异质片中载流子分布的栅极诱导跨维度

使用金属有机化学气相沉积技术,我们合成了 MoS 2和 WS 2的双层横向异质结构,其中每一层都由交替排列的 MoS 2和 WS 2纳米带组成。透射电子显微镜图像显示出格子图案对比度,反映了 Mo/Mo、W/Mo (Mo/W) 和 W/W 堆叠这三种不同的层间金属排列。基于密度泛函理论的理论计算阐明了MoS 2和WS 2的双层横向异质结构根据层间金属排列表现出复杂的 II 型带边缘排列:导带边缘位于 Mo/Mo 扇区中的 Mo 原子,而价带边缘位于 W/W 扇区中的 W 原子。根据复杂的带边缘排列,由 MoS 2和 WS 2条带组成的双层异质片中的场致载流子注入行为显示出栅极诱导的跨维性,其中累积的载流子分布从零到二维连续变化在施加的栅极电压上。可调载流子维数可适用于广泛的电子领域,例如具有可调点-点相互作用的量子点阵列。
更新日期:2023-03-22
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