The advances in biological magnetoreception and microelectronics have promoted the vigorous development of interactive electronic devices capable of noncontact interaction and control via magnetic fields. Here, a magnetosensory power device (MPD) that integrates a magnetic film ((Fe₉₀Co₁₀)₇₈Si₁₂B₁₀) unit into a cantilever-structured AlGaN/GaN-based high-electron-mobility-transistor is presented. The MPD is capable to not only sense external magnetic field, but also control device output power with the emulation of magnetoreception. Specifically, the device can achieve significant control of output power density (18.04 to 18.94 W mm⁻²) quasi-linearly with magnetic field stimuli (0–400 mT) at a gate bias of −5 V. In addition, the maximum output power density of the MPD can reach 85.8 W mm⁻² when a gate bias of 1 V is applied. The simulation and experimental results show that MPD has excellent orientation and magnetic field sensing functions under 0–400 mT magnetic fields. With the intelligent capabilities of magnetic sense and output power control, such interactive electronic devices will have broad application prospects in the fields of artificial intelligence, advanced robotics, and human-machine interfaces.

中文翻译：

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基于 AlGaN/GaN 异质结的交互式电子磁感应功率器件

生物磁感受技术和微电子技术的进步促进了能够通过磁场进行非接触交互和控制的交互电子设备的蓬勃发展。在此，提出了一种将磁膜（（Fe ₉₀ Co ₁₀）₇₈ Si ₁₂ B _{10 ）单元集成到悬臂结构的AlGaN/GaN基高电子迁移率晶体管中的磁感应功率器件（MPD）。}MPD不仅能够感知外部磁场，还能够通过模拟磁感应来控制设备输出功率。具体而言，该器件可以显着控制输出功率密度（18.04 至 18.94 W·mm ^-2) 在 −5 V 的栅极偏压下与磁场刺激 (0–400 mT) 呈准线性关系。此外，当施加 1 V 的栅极偏压时，MPD 的最大输出功率密度可以达到 85.8 W mm ⁻² . 仿真和实验结果表明，MPD在0-400 mT磁场下具有优异的定向和磁场传感功能。凭借磁感应和输出功率控制的智能能力，此类交互式电子设备将在人工智能、高级机器人和人机界面等领域具有广阔的应用前景。